BSP129H6906XTSA1 vs BSD214SNH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSP129H6906XTSA1 dari Infineon dan BSD214SNH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSP129H6906XTSA1 BSP129H6906XTSA1 - 240V N-Ch Depletion MOSFET | Infineon

BSP129H6906XTSA1 - 240V N-Ch Depletion MOSFET | Infineon

BSP129H6906XTSA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSP129H6906XTSA1 BSD214SNH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSP129H6906XTSA1 —
FET Type N-Channel, Depletion Mode N-Channel
Drain-Source Voltage (VDS) 240 V —
Continuous Drain Current (ID) at TA=25C 350 mA —
Power Dissipation (PD) at TA=25C 1.8 W —
Drain-Source On-Resistance (RDS(on)) 6 Ohm (max) —
Operating Mode Normally-On (Depletion) —
Gate-Source Pinch-Off Voltage [DATA_NEEDED: VGS(off) typical value] —
Paket PG-SOT223-4 (SOT-223) SOT-363 (PG-SOT363-PO), 6-pin
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 functional + 1 tab (4 leads) —
Rentang Suhu Kerja [DATA_NEEDED: TJ max] -55C to +150C (junction)
ESD Protection Integrated Zener diodes on gate —
Status RoHS Compliant Compliant
Level MSL 1 (unlimited floor life) 1
Technology — MOSFET (Metal Oxide), OptiMOS
Drain-to-Source Voltage (Vdss) — 20 V
Continuous Drain Current (Id) at 25C — 1.5 A
Power Dissipation (Pd) at Ta — 500 mW
Gate Drive Voltage (Rds On rated) — 2.5 V, 4.5 V
Rds On (Max) @ Vgs=4.5V — [DATA_NEEDED: Rds On at Vgs=4.5V]
Rds On (Max) @ Vgs=2.5V — [DATA_NEEDED: Rds On at Vgs=2.5V]
Vgs(th) (typical) — [DATA_NEEDED: Vgs threshold typical]
Automotive Qualification — AEC-Q101 qualified
Lead Plating — Pb-free
Standard Pack Quantity — 3000 (Tape & Reel)

Spek dan Sumber

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