BSP129H6906XTSA1 vs BSD214SNH6327XTSA1 比較

詳細並排比較 BSP129H6906XTSA1 由 Infineon 與 BSD214SNH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSP129H6906XTSA1 BSP129H6906XTSA1 - 240V N-Ch Depletion MOSFET | Infineon

BSP129H6906XTSA1 - 240V N-Ch Depletion MOSFET | Infineon

BSP129H6906XTSA1 ✓ 啟用中
Infineon
BSD214SNH6327XTSA1 BSD214SNH6327XTSA1 - 20V N-Ch OptiMOS 1.5A | Infineon SOT-363

BSD214SNH6327XTSA1 - 20V N-Ch OptiMOS 1.5A | Infineon SOT-363

BSD214SNH6327XTSA1 ✓ 啟用中

規格比較

參數 BSP129H6906XTSA1 BSD214SNH6327XTSA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Part Number BSP129H6906XTSA1 —
FET Type N-Channel, Depletion Mode N-Channel
Drain-Source Voltage (VDS) 240 V —
Continuous Drain Current (ID) at TA=25C 350 mA —
Power Dissipation (PD) at TA=25C 1.8 W —
Drain-Source On-Resistance (RDS(on)) 6 Ohm (max) —
Operating Mode Normally-On (Depletion) —
Gate-Source Pinch-Off Voltage [DATA_NEEDED: VGS(off) typical value] —
封裝 PG-SOT223-4 (SOT-223) SOT-363 (PG-SOT363-PO), 6-pin
安裝類型 Surface Mount Surface Mount
腳位數 3 functional + 1 tab (4 leads) —
工作溫度範圍 [DATA_NEEDED: TJ max] -55C to +150C (junction)
ESD Protection Integrated Zener diodes on gate —
RoHS 狀態 Compliant Compliant
MSL 等級 1 (unlimited floor life) 1
Technology — MOSFET (Metal Oxide), OptiMOS
Drain-to-Source Voltage (Vdss) — 20 V
Continuous Drain Current (Id) at 25C — 1.5 A
Power Dissipation (Pd) at Ta — 500 mW
Gate Drive Voltage (Rds On rated) — 2.5 V, 4.5 V
Rds On (Max) @ Vgs=4.5V — [DATA_NEEDED: Rds On at Vgs=4.5V]
Rds On (Max) @ Vgs=2.5V — [DATA_NEEDED: Rds On at Vgs=2.5V]
Vgs(th) (typical) — [DATA_NEEDED: Vgs threshold typical]
Automotive Qualification — AEC-Q101 qualified
Lead Plating — Pb-free
Standard Pack Quantity — 3000 (Tape & Reel)

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