BSP135H6327XTSA1 vs BSL308CH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSP135H6327XTSA1 dari Infineon dan BSL308CH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSP135H6327XTSA1 BSL308CH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSP135H6327XTSA1 —
FET Type N-Channel, Depletion Mode —
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID) 120 mA —
Power Dissipation (PD) 1.8 W —
On-Resistance RDS(on) max 45 ohm at VGS = 0 V —
On-Resistance RDS(on) 25 ohm (typical, per digchip) —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Operating Mode Normally ON (depletion) —
Paket PG-SOT223-4 (SOT-223-3 plus tab) PG-TSOP6-6 (TSOP-6, 6 pins)
Tipe Mounting Surface Mount Surface Mount
Technology SIPMOS (planar DMOS) —
Rentang Suhu Kerja -55C to +150C (junction, typical) -55 °C to +150 °C
Status RoHS Compliant Compliant
Level MSL 1 1 (per JEDEC J-STD-020)
Product Family — OptiMOS™ low-voltage power MOSFETs
Configuration — Complementary dual MOSFET (1 N-channel + 1 P-channel)
Drain-to-Source Voltage (VDS) — 30 V
Continuous Drain Current - N-channel (ID, N-ch) — 2.3 A
Continuous Drain Current - P-channel (ID, P-ch) — 2 A
Total Power Dissipation (Ptot) — 500 mW
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
On-State Resistance N-channel (RDS(on) @ VGS=10V) — [DATA_NEEDED: RDS(on) N-ch]
On-State Resistance P-channel (RDS(on) @ VGS=10V) — [DATA_NEEDED: RDS(on) P-ch]
Total Gate Charge (Qg) — 5 nC @ 10 V
Input Capacitance (Ciss) — 18 pF
Automotive Qualified — Yes (per Infineon part-number suffix, automotive grade)
Lead-Free — Yes
Bebas Halogen — Yes (per Infineon product family convention)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon