BSP135H6327XTSA1 vs BSL308CH6327XTSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSP135H6327XTSA1 sa pamamagitan ng Infineon at BSL308CH6327XTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSL308CH6327XTSA1 - 30V 2.3A Dual N/P MOSFET Array | Infineon
BSL308CH6327XTSA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSP135H6327XTSA1 | BSL308CH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSP135H6327XTSA1 | — |
| FET Type | N-Channel, Depletion Mode | — |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID) | 120 mA | — |
| Power Dissipation (PD) | 1.8 W | — |
| On-Resistance RDS(on) max | 45 ohm at VGS = 0 V | — |
| On-Resistance RDS(on) | 25 ohm (typical, per digchip) | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Operating Mode | Normally ON (depletion) | — |
| Packhaging | PG-SOT223-4 (SOT-223-3 plus tab) | PG-TSOP6-6 (TSOP-6, 6 pins) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | SIPMOS (planar DMOS) | — |
| Hanay ng Temperature na Operasyon | -55C to +150C (junction, typical) | -55 °C to +150 °C |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 | 1 (per JEDEC J-STD-020) |
| Product Family | — | OptiMOS™ low-voltage power MOSFETs |
| Configuration | — | Complementary dual MOSFET (1 N-channel + 1 P-channel) |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current - N-channel (ID, N-ch) | — | 2.3 A |
| Continuous Drain Current - P-channel (ID, P-ch) | — | 2 A |
| Total Power Dissipation (Ptot) | — | 500 mW |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| On-State Resistance N-channel (RDS(on) @ VGS=10V) | — | [DATA_NEEDED: RDS(on) N-ch] |
| On-State Resistance P-channel (RDS(on) @ VGS=10V) | — | [DATA_NEEDED: RDS(on) P-ch] |
| Total Gate Charge (Qg) | — | 5 nC @ 10 V |
| Input Capacitance (Ciss) | — | 18 pF |
| Automotive Qualified | — | Yes (per Infineon part-number suffix, automotive grade) |
| Lead-Free | — | Yes |
| Wala sa Halogen | — | Yes (per Infineon product family convention) |