BSR316PH6327XTSA1 vs BSP125H6433XTMA1 Perbandingan

Perbandingan bersamaan detil BSR316PH6327XTSA1 dari Infineon dan BSP125H6433XTMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSP125H6433XTMA1 BSP125H6433XTMA1 - 600V N-Ch 120mA MOSFET | Infineon

BSP125H6433XTMA1 - 600V N-Ch 120mA MOSFET | Infineon

BSP125H6433XTMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSR316PH6327XTSA1 BSP125H6433XTMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSR316PH6327XTSA1 —
Series OptiMOS —
FET Type P-Channel Enhancement Mode N-Channel Enhancement Mode
Drain-Source Voltage (VDS) -100 V —
Continuous Drain Current (ID) at TA -360 mA 120 mA
Continuous Drain Current (ID) at TC [DATA_NEEDED: ID at TC specific value] —
On-State Resistance RDS(on) max 1800 mOhm at VGS = -10 V —
Gate Threshold Voltage VGS(th) -1.7 V typical, -2.5 V max —
Gate Charge Qg [DATA_NEEDED: Qg total] —
Power Dissipation (Tc) 500 mW —
Paket PG-SC59-3 (SC-59 / SOT-23 equivalent) PG-SOT223-4 (3+tab)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55 C to +150 C (junction) -55C to +150C (TJ)
Qualification Automotive —
Status RoHS Compliant Compliant
Level MSL 1 —
Polarity P-Channel —
Drain-Source Voltage (V(BR)DSS) — 600 V
Power Dissipation (PD) at TA — 1.8 W
Automotive Qualification — AEC-Q101
Lead Plating — Pb-free
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max]
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=10V]
Total Gate Charge (Qg) — [DATA_NEEDED: total Qg]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Reverse Transfer Capacitance (Crss) — [DATA_NEEDED: Crss]
Thermal Resistance RthJA — [DATA_NEEDED: theta_JA on standard PCB]
Configuration — Single N-Channel MOSFET

Spek dan Sumber

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