BSS119NH6327XTSA1 vs BSS214NH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSS119NH6327XTSA1 dari Infineon dan BSS214NH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSS214NH6327XTSA1 BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon

BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon

BSS214NH6327XTSA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSS119NH6327XTSA1 BSS214NH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor N-Channel MOSFET —
FET Technology Enhancement-mode, planar N-channel —
Drain-Source Voltage (VDS) max 100 V —
Continuous Drain Current (ID) at TA=25°C 190 mA —
Power Dissipation (PD) at TA=25°C 500 mW —
Drain-Source On-Resistance (RDS(on)) max 6 Ω (typical) [DATA_NEEDED: exact VGS condition and max value] —
Gate Threshold Voltage (VGS(th)) 0.8 V to 1.8 V (typical) [DATA_NEEDED: exact min/typ/max] —
Gate Drive Voltage (VGS) ±20 V max —
Paket PG-SOT23 (SOT-23-3) SOT-23 (PG-SOT23), 3 pins
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55°C to +150°C (TJ) [DATA_NEEDED: TA range from datasheet] -55C to +150C (junction)
Qualification AEC-Q101 (automotive grade) AEC-Q101 (Automotive)
Status RoHS Compliant Compliant
Lead-Free Yes —
Packaging Tape & Reel (3,000 pcs/reel) —
Level MSL 1 [DATA_NEEDED: confirm from datasheet] 1 (per JEDEC J-STD-020)
FET Type — N-Channel
Drain-Source Voltage (VDS) — 20 V
Continuous Drain Current (ID) — 1.5 A (Ta)
Power Dissipation (PD) — 500 mW (Ta)
Drain-Source On-Resistance (RDS(on) max) — 250 mOhm at VGS = 4.5 V
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max values]
Gate-Source Voltage (VGS max) — ±12 V (recommended)
Technology — OptiMOS 2 (planar N-channel)
Lead Finish — Pb-free lead plating (matte tin)
ESD Protection — Yes (gate ESD diode)

Spek dan Sumber

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