BSS119NH6327XTSA1 vs BSS214NH6327XTSA1 비교
다음의 상세 나란히 비교: BSS119NH6327XTSA1 제조: Infineon 및 BSS214NH6327XTSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BSS119NH6327XTSA1 | BSS214NH6327XTSA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.12 | $0.09 |
| 트랜지스터 유형 | N-Channel MOSFET | — |
| FET Technology | Enhancement-mode, planar N-channel | — |
| Drain-Source Voltage (VDS) max | 100 V | — |
| Continuous Drain Current (ID) at TA=25°C | 190 mA | — |
| Power Dissipation (PD) at TA=25°C | 500 mW | — |
| Drain-Source On-Resistance (RDS(on)) max | 6 Ω (typical) [DATA_NEEDED: exact VGS condition and max value] | — |
| Gate Threshold Voltage (VGS(th)) | 0.8 V to 1.8 V (typical) [DATA_NEEDED: exact min/typ/max] | — |
| Gate Drive Voltage (VGS) | ±20 V max | — |
| 패키지 | PG-SOT23 (SOT-23-3) | SOT-23 (PG-SOT23), 3 pins |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 범위 | -55°C to +150°C (TJ) [DATA_NEEDED: TA range from datasheet] | -55C to +150C (junction) |
| Qualification | AEC-Q101 (automotive grade) | AEC-Q101 (Automotive) |
| RoHS 상태 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Packaging | Tape & Reel (3,000 pcs/reel) | — |
| MSL 레벨 | 1 [DATA_NEEDED: confirm from datasheet] | 1 (per JEDEC J-STD-020) |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 20 V |
| Continuous Drain Current (ID) | — | 1.5 A (Ta) |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| Drain-Source On-Resistance (RDS(on) max) | — | 250 mOhm at VGS = 4.5 V |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max values] |
| Gate-Source Voltage (VGS max) | — | ±12 V (recommended) |
| Technology | — | OptiMOS 2 (planar N-channel) |
| Lead Finish | — | Pb-free lead plating (matte tin) |
| ESD Protection | — | Yes (gate ESD diode) |