BSS169H6327XTSA1 vs BSS205NH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSS169H6327XTSA1 dari Infineon dan BSS205NH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSS205NH6327XTSA1 BSS205NH6327XTSA1 - 20V N-Ch 2.5A MOSFET SOT-23 | Infineon

BSS205NH6327XTSA1 - 20V N-Ch 2.5A MOSFET SOT-23 | Infineon

BSS205NH6327XTSA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSS169H6327XTSA1 BSS205NH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel Depletion Mode —
Drain-to-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) 170 mA (Ta) —
Power Dissipation (PD) 360 mW (Ta) —
RDS(on) Maximum 6 Ohm at VGS=0 V —
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS absolute maximum rating] —
Gate Threshold Voltage (VGS(th)) Pinch-off approx. -3.5 V (typical) —
Rentang Suhu Kerja [DATA_NEEDED: junction/ambient operating temperature range] -55 °C to +150 °C (junction)
Paket PG-SOT23 (SOT-23-3) PG-SOT23 (SC-59, TO-236-3), 3-pin
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 —
Level MSL 1 (per JEDEC J-STD-020) —
Status RoHS Compliant —
Lead-Free Yes —
Technology Depletion-mode vertical DMOS —
Drain Current at 25C 170 mA continuous —
Typical RDS(on) [DATA_NEEDED: typical RDS(on) value] —
Manufacturer — Infineon Technologies
Part Number — BSS205NH6327XTSA1
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage V<sub>DS</sub> — 20 V
Continuous Drain Current I<sub>D</sub> (Ta) — 2.5 A
Power Dissipation P<sub>D</sub> (Ta) — 500 mW
R<sub>DS(on)</sub> max (V<sub>GS</sub>=4.5 V) — 85 mΩ
Gate Threshold V<sub>GS(th)</sub> — [DATA_NEEDED: Vgs(th) typical value]
Gate Drive Voltage — Logic-level compatible
Qualification — AEC-Q101
Lead Plating — Pb-free
RoHS Compliance — Compliant
MSL (Moisture Sensitivity Level) — MSL1 (per JEDEC J-STD-020)
Packaging — Tape & Reel (H6327)

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