BSS169H6327XTSA1 vs BSS205NH6327XTSA1 比較

詳細並排比較 BSS169H6327XTSA1 由 Infineon 與 BSS205NH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSS169H6327XTSA1 BSS169H6327XTSA1 - 100V N-Ch Depletion MOSFET 170mA | Infineon

BSS169H6327XTSA1 - 100V N-Ch Depletion MOSFET 170mA | Infineon

BSS169H6327XTSA1 ✓ 啟用中
Infineon
BSS205NH6327XTSA1 BSS205NH6327XTSA1 - 20V N-Ch 2.5A MOSFET SOT-23 | Infineon

BSS205NH6327XTSA1 - 20V N-Ch 2.5A MOSFET SOT-23 | Infineon

BSS205NH6327XTSA1 ✓ 啟用中

規格比較

參數 BSS169H6327XTSA1 BSS205NH6327XTSA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel Depletion Mode —
Drain-to-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) 170 mA (Ta) —
Power Dissipation (PD) 360 mW (Ta) —
RDS(on) Maximum 6 Ohm at VGS=0 V —
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS absolute maximum rating] —
Gate Threshold Voltage (VGS(th)) Pinch-off approx. -3.5 V (typical) —
工作溫度範圍 [DATA_NEEDED: junction/ambient operating temperature range] -55 °C to +150 °C (junction)
封裝 PG-SOT23 (SOT-23-3) PG-SOT23 (SC-59, TO-236-3), 3-pin
安裝類型 Surface Mount Surface Mount
腳位數 3 —
MSL 等級 1 (per JEDEC J-STD-020) —
RoHS 狀態 Compliant —
Lead-Free Yes —
Technology Depletion-mode vertical DMOS —
Drain Current at 25C 170 mA continuous —
Typical RDS(on) [DATA_NEEDED: typical RDS(on) value] —
Manufacturer — Infineon Technologies
Part Number — BSS205NH6327XTSA1
電晶體類型 — N-Channel MOSFET
Drain-Source Voltage V<sub>DS</sub> — 20 V
Continuous Drain Current I<sub>D</sub> (Ta) — 2.5 A
Power Dissipation P<sub>D</sub> (Ta) — 500 mW
R<sub>DS(on)</sub> max (V<sub>GS</sub>=4.5 V) — 85 mΩ
Gate Threshold V<sub>GS(th)</sub> — [DATA_NEEDED: Vgs(th) typical value]
Gate Drive Voltage — Logic-level compatible
Qualification — AEC-Q101
Lead Plating — Pb-free
RoHS Compliance — Compliant
MSL (Moisture Sensitivity Level) — MSL1 (per JEDEC J-STD-020)
Packaging — Tape & Reel (H6327)

資料表與資源

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