BSS192PH6327FTSA1 vs BSP315PH6327XTSA1 Perbandingan
Perbandingan bersamaan detil BSS192PH6327FTSA1 dari Infineon dan BSP315PH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSS192PH6327FTSA1 | BSP315PH6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | P-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide) | OptiMOS (enhancement mode) |
| Drain-to-Source Voltage (Vdss) | 250 V | — |
| Continuous Drain Current (Id) @ 25C | 190 mA (Ta) | — |
| Power Dissipation (Pd) | 1 W (Ta) | — |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8 V, 10 V | — |
| Rds On (Max) @ Id, Vgs | [DATA_NEEDED: Rds On max @ Vgs] | — |
| Vgs(th) (Max) | [DATA_NEEDED: gate threshold voltage max] | — |
| Vgs(th) (Typ) | [DATA_NEEDED: gate threshold voltage typ] | — |
| Paket | PG-SOT89 (SOT-89-3, 4-pin 3+Tab) | PG-SOT223-4 (SOT-223-3 pinout with exposed tab) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | [DATA_NEEDED: Tj max / operating temp] | -55 C to +150 C (junction) |
| Automotive Qualification | AEC-Q101 (per distributor listing) | — |
| Series | SIPMOS Small-Signal-Transistor | — |
| Part Status | Active | — |
| Status RoHS | [DATA_NEEDED: explicit RoHS status from datasheet] | — |
| Drain-Source Voltage (VDS) | — | -60 V |
| Continuous Drain Current (ID) | — | -1.17 A (Ta) |
| Power Dissipation (PD) | — | 1.8 W (Ta) |
| Gate-Source Voltage (VGS) | — | ±20 V (max) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max] |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=-10 V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Avalanche Energy Rated | — | Yes (per datasheet) |
| Lead-Free / RoHS | — | Yes / Compliant |
| Level MSL | — | 1 (per JEDEC J-STD-020) |