BSS306NH6327XTSA1 vs IRLML6346TRPBF Perbandingan

Perbandingan bersamaan detil BSS306NH6327XTSA1 dari Infineon dan IRLML6346TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSS306NH6327XTSA1 IRLML6346TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSS306NH6327XTSA1 —
Part Family BSS306N (OptiMOS Small Signal) —
FET Type N-Channel —
Technology MOSFET (Metal Oxide) HEXFET Power MOSFET
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) 2.3 A (Ta) 3.4 A (TA=25C)
Power Dissipation (PD) 500 mW (Ta) —
RDS(on) max [DATA_NEEDED: exact RDS(on) max value in mΩ] —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max in V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) in V] [DATA_NEEDED: VGS(th) value]
Paket SOT-23 (PG-SOT23), 3-pin Micro3 / SOT-23
Tipe Mounting Surface Mount Surface Mount
Suhu Kerja -55°C to +150°C (TJ) —
Qualification AEC-Q101 (Automotive) —
Lead Plating Pb-free (RoHS compliant) —
Configuration Single N-Channel, 3-pin —
Polarity — N-Channel
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
RDS(on) max @ VGS=2.5V — 63 mOhm
RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate Drive Capability — 2.5V logic-level
Maximum Power Dissipation (PD) — 1.3 W (TA=25C, 1in2 FR4)
Suhu Hubung Kerja — -55C to +150C
Level MSL — 1
Lead-Free Finish — Yes (PBF suffix)
Status RoHS — Compliant

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