BSS316NH6327XTSA1 vs BSS314PEH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSS316NH6327XTSA1 dari Infineon dan BSS314PEH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSS316NH6327XTSA1 BSS314PEH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel, Enhancement Mode P-Channel
Technology OptiMOS 2 (Trench) MOSFET (Metal Oxide)
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at TA=25C 1.4 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Drain-Source On-Resistance RDS(on) max 160 mOhm at VGS=10V, ID=1.4A —
Gate-Source Threshold Voltage VGS(th) typ 2 V at ID=3.7 uA —
Total Gate Charge (Qg) 600 pC at VGS=5 V —
Input Capacitance (Ciss) 94 pF at VDS=15 V —
Output Capacitance (Coss) [DATA_NEEDED: output capacitance] —
Reverse Transfer Capacitance (Crss) [DATA_NEEDED: reverse transfer capacitance] —
Maximum Power Dissipation (PD) at TA=25C 500 mW —
Rentang Suhu Hubung Kerja -55 C to +150 C —
Paket PG-SOT23 (SOT-23-3) PG-SOT23-3 (SOT-23-3)
Tipe Mounting Surface Mount Surface Mount
Lead Plating Pb-free (Matte Tin) —
Level MSL MSL1 (per JEDEC J-STD-020) MSL1 (per JEDEC J-STD-020)
Status RoHS Compliant Compliant
Automotive Qualification AEC-Q101 qualified —
Drain-to-Source Voltage (VDS) — -30 V
Continuous Drain Current (ID) @ TA=25C — -1.5 A
Power Dissipation (PD) @ TA=25C — 500 mW
RDS(on) max @ VGS=-10V — 140 mOhm
RDS(on) max @ VGS=-4.5V — [DATA_NEEDED: RDS(on) at -4.5V VGS]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Gate Drive Voltage (max Rds(on)) — -4.5 V, -10 V
Rentang Suhu Kerja — -55 C to +150 C (TJ)
Qualification — AEC-Q101 (Automotive)
Pin Configuration — G-D-S (Gate, Drain, Source)

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