BSS87H6327FTSA1 vs BSP316PH6327XTSA1 Perbandingan
Perbandingan bersamaan detil BSS87H6327FTSA1 dari Infineon dan BSP316PH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSS87H6327FTSA1 | BSP316PH6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel enhancement-mode | P-Channel |
| Drain-Source Voltage (VDS) | 240 V | — |
| Continuous Drain Current (ID) | 260 mA (Ta) | — |
| Power Dissipation (PD) | 1 W (Ta) | — |
| Drain-Source On-Resistance (RDS(on)) | 6 ohm max at VGS=10V | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: VGS(th) typical] |
| Paket | PG-SOT89-4-2 (SOT-89) | PG-SOT223-4 (TO-261-4) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55C to +150C (junction) | -55 C to +150 C (junction) |
| Jumlah Pin | 3 (Gate / Drain / Source) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free / Pb-Free | Yes (Pb-free plating) | — |
| Level MSL | 1 (per JEDEC J-STD-020) | 1 |
| Process Technology | Vertical DMOS | — |
| Drain-to-Source Voltage (VDS) | — | -100 V |
| Continuous Drain Current (ID) at TA=25C | — | -680 mA |
| Total Power Dissipation (Ptot) at TA=25C | — | 1.8 W |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=-10V] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Jumlah Pin | — | 3 + thermal tab |
| Channel Mode | — | Enhancement |
| Technology | — | SIPMOS (P-channel MOSFET) |
| Packaging | — | Tape & Reel (H6327 suffix) |