BSS87H6327FTSA1 vs BSP316PH6327XTSA1 比較

詳細並排比較 BSS87H6327FTSA1 由 Infineon 與 BSP316PH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSS87H6327FTSA1 BSS87H6327FTSA1 - 240V N-Ch MOSFET, 260mA, SOT-89 | Infineon

BSS87H6327FTSA1 - 240V N-Ch MOSFET, 260mA, SOT-89 | Infineon

BSS87H6327FTSA1 ✓ 啟用中
Infineon
BSP316PH6327XTSA1 BSP316PH6327XTSA1 - P-Ch 100V 680mA MOSFET | Infineon | SOT-223

BSP316PH6327XTSA1 - P-Ch 100V 680mA MOSFET | Infineon | SOT-223

BSP316PH6327XTSA1 ✓ 啟用中

規格比較

參數 BSS87H6327FTSA1 BSP316PH6327XTSA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel enhancement-mode P-Channel
Drain-Source Voltage (VDS) 240 V —
Continuous Drain Current (ID) 260 mA (Ta) —
Power Dissipation (PD) 1 W (Ta) —
Drain-Source On-Resistance (RDS(on)) 6 ohm max at VGS=10V —
Gate-Source Voltage (VGS) +/-20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] [DATA_NEEDED: VGS(th) typical]
封裝 PG-SOT89-4-2 (SOT-89) PG-SOT223-4 (TO-261-4)
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -55C to +150C (junction) -55 C to +150 C (junction)
腳位數 3 (Gate / Drain / Source) —
Automotive Qualification AEC-Q101 qualified —
RoHS 狀態 Compliant Compliant
Lead-Free / Pb-Free Yes (Pb-free plating) —
MSL 等級 1 (per JEDEC J-STD-020) 1
Process Technology Vertical DMOS —
Drain-to-Source Voltage (VDS) — -100 V
Continuous Drain Current (ID) at TA=25C — -680 mA
Total Power Dissipation (Ptot) at TA=25C — 1.8 W
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=-10V]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
腳位數 — 3 + thermal tab
Channel Mode — Enhancement
Technology — SIPMOS (P-channel MOSFET)
Packaging — Tape & Reel (H6327 suffix)

資料表與資源

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