BSZ017NE2LS5IATMA1 vs BSZ031NE2LS5ATMA1 Perbandingan

Perbandingan bersamaan detil BSZ017NE2LS5IATMA1 dari Infineon dan BSZ031NE2LS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSZ017NE2LS5IATMA1 BSZ017NE2LS5IATMA1 - 25V OptiMOS 5 N-FET, 1.7mΩ TSDSON-8

BSZ017NE2LS5IATMA1 - 25V OptiMOS 5 N-FET, 1.7mΩ TSDSON-8

BSZ017NE2LS5IATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSZ017NE2LS5IATMA1 BSZ031NE2LS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel —
Drain-Source Voltage (VDS) 25 V —
Continuous Drain Current (TA) 27 A —
Continuous Drain Current (TC) 40 A —
On-Resistance RDS(on) @ VGS=10V 1.7 mΩ —
On-Resistance Test Current 20 A —
Gate-Source Voltage (VGS) Rating ±16 V —
Gate Threshold Voltage VGS(th) 2 V @ 250 µA —
Total Gate Charge Qg 30 nC @ VGS=10V —
Input Capacitance Ciss 2000 pF @ VDS=12V —
Power Dissipation (TA) 2.1 W —
Power Dissipation (TC) 50 W —
Suhu Hubung Kerja -55°C to +150°C -55 C to +150 C
Paket PG-TSDSON-8-FL (8-PowerTDFN) PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm)
Tipe Mounting Surface Mount Surface Mount
Series / Family OptiMOS 5 25V —
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Part Number — BSZ031NE2LS5ATMA1
Technology / Platform — OptiMOS 5 25V/30V N-channel trench MOSFET
Drain-Source Voltage (VDS) max — 25 V
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max]
Continuous Drain Current (ID) at Ta=25C — 19 A
Continuous Drain Current (ID) at Tc=25C — 40 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
RDS(on) max @ VGS=10 V — 3.1 mOhm
RDS(on) typical @ VGS=4.5 V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Power Dissipation at Ta=25C — 2.1 W
Power Dissipation at Tc=25C — 30 W
Level MSL — [DATA_NEEDED: MSL]
Lead-Free — Yes
Bebas Halogen — Yes

Spek dan Sumber

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