BSZ017NE2LS5IATMA1 vs BSZ031NE2LS5ATMA1 Comparison
Detailed side-by-side comparison of BSZ017NE2LS5IATMA1 by Infineon and BSZ031NE2LS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ017NE2LS5IATMA1
BSZ017NE2LS5IATMA1 - 25V OptiMOS 5 N-FET, 1.7mΞ© TSDSON-8
BSZ017NE2LS5IATMA1 β ActiveInfineon
BSZ031NE2LS5ATMA1 - 25V N-Ch 3.1mOhm OptiMOS 5 MOSFET | Infineon
BSZ031NE2LS5ATMA1 β ActiveSpecification Comparison
| Parameter | BSZ017NE2LS5IATMA1 | BSZ031NE2LS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.64 | $0.26 |
| Polarity | N-Channel | β |
| Drain-Source Voltage (VDS) | 25 V | β |
| Continuous Drain Current (TA) | 27 A | β |
| Continuous Drain Current (TC) | 40 A | β |
| On-Resistance RDS(on) @ VGS=10V | 1.7 mΞ© | β |
| On-Resistance Test Current | 20 A | β |
| Gate-Source Voltage (VGS) Rating | Β±16 V | β |
| Gate Threshold Voltage VGS(th) | 2 V @ 250 Β΅A | β |
| Total Gate Charge Qg | 30 nC @ VGS=10V | β |
| Input Capacitance Ciss | 2000 pF @ VDS=12V | β |
| Power Dissipation (TA) | 2.1 W | β |
| Power Dissipation (TC) | 50 W | β |
| Operating Junction Temperature | -55Β°C to +150Β°C | -55 C to +150 C |
| Package | PG-TSDSON-8-FL (8-PowerTDFN) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Series / Family | OptiMOS 5 25V | β |
| RoHS Status | Compliant | Compliant |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | BSZ031NE2LS5ATMA1 |
| Technology / Platform | β | OptiMOS 5 25V/30V N-channel trench MOSFET |
| Drain-Source Voltage (VDS) max | β | 25 V |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max] |
| Continuous Drain Current (ID) at Ta=25C | β | 19 A |
| Continuous Drain Current (ID) at Tc=25C | β | 40 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| RDS(on) max @ VGS=10 V | β | 3.1 mOhm |
| RDS(on) typical @ VGS=4.5 V | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Power Dissipation at Ta=25C | β | 2.1 W |
| Power Dissipation at Tc=25C | β | 30 W |
| MSL Level | β | [DATA_NEEDED: MSL] |
| Lead-Free | β | Yes |
| Halogen-Free | β | Yes |