BSZ018NE2LSIATMA1 vs BSC010NE2LSIATMA1 Perbandingan

Perbandingan bersamaan detil BSZ018NE2LSIATMA1 dari Infineon dan BSC010NE2LSIATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSZ018NE2LSIATMA1 BSC010NE2LSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSZ018NE2LSIATMA1 —
Channel Type N-Channel —
Drain-Source Voltage (VDS) 25 V 25 V
Continuous Drain Current (ID) at Ta=25C 22 A —
Continuous Drain Current (ID) at Tc=25C 40 A —
Pulsed Drain Current (IDM) 160 A —
Typical On-Resistance RDS(on) at VGS=10V 1.8 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Power Dissipation at Ta=25C 2.1 W —
Power Dissipation at Tc=25C 69 W —
Rentang Suhu Kerja -55 C to +150 C -55C to +150C (TJ)
Paket PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) PG-TDSON-8-7 (TDSON-8 EP)
Tipe Mounting Surface Mount Surface Mount
Technology OptiMOS (Infineon trench MOSFET) OptiMOS (Trench)
Status RoHS Compliant Compliant
Lead-Free Yes —
Series / Family — OptiMOS 25V
Tipe Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at TA — 38 A
Continuous Drain Current (ID) at TC — 100 A
Power Dissipation (PD) at TA — 2.5 W
Power Dissipation (PD) at TC — 96 W
Configuration — Single N-Channel
Jumlah Pin — 8
Gate Drive — Logic-level compatible
Level MSL — [DATA_NEEDED: MSL rating]
Rds(on) at 10V — [DATA_NEEDED: Rds(on) at VGS=10V]
Rds(on) at 4.5V — [DATA_NEEDED: Rds(on) at VGS=4.5V]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]

Spek dan Sumber

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