BSZ024N04LS6ATMA1 vs BSZ096N10LS5ATMA1 Perbandingan
Perbandingan bersamaan detil BSZ024N04LS6ATMA1 dari Infineon dan BSZ096N10LS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
BSZ096N10LS5ATMA1 - 100V 9.6mΩ OptiMOS 5 N-Channel MOSFET | Infineon
BSZ096N10LS5ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | BSZ024N04LS6ATMA1 | BSZ096N10LS5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Transistor | N-Channel MOSFET | — |
| Technology | OptiMOS 6 (shielded-gate trench) | OptiMOS 5 trench MOSFET |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D, Ta) | 24 A | — |
| Continuous Drain Current (I_D, Tc) | 40 A | — |
| Pulsed Drain Current (I_DM) | 130 A | — |
| R_DS(on) Max @ V_GS=10V | 2.4 mΩ | — |
| R_DS(on) Max @ V_GS=4.5V | [DATA_NEEDED: R_DS(on) at 4.5V] | — |
| Gate Threshold Voltage (V_GS(th)) | 2.3 V (typical) | — |
| Total Gate Charge (Q_g) @ V_GS=10V | 25 nC | — |
| Input Capacitance (C_iss) | 1.8 nF | — |
| Output Capacitance (C_oss) | 19 pF | — |
| Power Dissipation (P_D, Ta) | 2.5 W | — |
| Power Dissipation (P_D, Tc) | 75 W | — |
| Suhu Hubung Kerja | -55°C to +175°C | — |
| Paket | PG-TSDSON-8-FL (3.3 mm x 3.3 mm) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) |
| Tipe Mounting | Surface Mount, top-side drain pad | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Level MSL | 1 (per JEDEC J-STD-020) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS max) | — | 100 V |
| Gate-Source Voltage (VGS max) | — | 20 V (typical) |
| Continuous Drain Current (ID, TC=25 °C) | — | 40 A |
| Maximum Silicon Drain Current (ID max) | — | 62 A |
| Pulse Drain Current (ID,pulse) | — | 160 A |
| On-Resistance RDS(on) max | — | 9.6 mΩ at VGS=10 V |
| Total Power Dissipation (Ptot, TC=25 °C) | — | 69 W |
| Gate Threshold Voltage VGS(th) | — | Logic-level (low single-volt range) |
| Diode Continuous Forward Current (IS) | — | 40 A (TC=25 °C) |
| Diode Forward Voltage (VSD) | — | 0.85 V typ, 1.2 V max at IF=20 A |
| Rentang Suhu Kerja | — | -55 °C to +150 °C (junction) |
| Gate Drive | — | Logic-level compatible |
| ESD Protection | — | Yes (gate-integrated) |
| Packaging Code | — | ATMA1 (tape and reel) |