BSZ024N04LS6ATMA1 vs BSZ096N10LS5ATMA1 Comparison
Detailed side-by-side comparison of BSZ024N04LS6ATMA1 by Infineon and BSZ096N10LS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ096N10LS5ATMA1 - 100V 9.6mΞ© OptiMOS 5 N-Channel MOSFET | Infineon
BSZ096N10LS5ATMA1 β ActiveSpecification Comparison
| Parameter | BSZ024N04LS6ATMA1 | BSZ096N10LS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.46 | $0.94 |
| Transistor Type | N-Channel MOSFET | β |
| Technology | OptiMOS 6 (shielded-gate trench) | OptiMOS 5 trench MOSFET |
| Drain-Source Voltage (V_DS) | 40 V | β |
| Continuous Drain Current (I_D, Ta) | 24 A | β |
| Continuous Drain Current (I_D, Tc) | 40 A | β |
| Pulsed Drain Current (I_DM) | 130 A | β |
| R_DS(on) Max @ V_GS=10V | 2.4 mΞ© | β |
| R_DS(on) Max @ V_GS=4.5V | [DATA_NEEDED: R_DS(on) at 4.5V] | β |
| Gate Threshold Voltage (V_GS(th)) | 2.3 V (typical) | β |
| Total Gate Charge (Q_g) @ V_GS=10V | 25 nC | β |
| Input Capacitance (C_iss) | 1.8 nF | β |
| Output Capacitance (C_oss) | 19 pF | β |
| Power Dissipation (P_D, Ta) | 2.5 W | β |
| Power Dissipation (P_D, Tc) | 75 W | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | β |
| Package | PG-TSDSON-8-FL (3.3 mm x 3.3 mm) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) |
| Mounting Type | Surface Mount, top-side drain pad | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 5 |
| Polarity | β | N-Channel |
| Drain-Source Voltage (VDS max) | β | 100 V |
| Gate-Source Voltage (VGS max) | β | 20 V (typical) |
| Continuous Drain Current (ID, TC=25 Β°C) | β | 40 A |
| Maximum Silicon Drain Current (ID max) | β | 62 A |
| Pulse Drain Current (ID,pulse) | β | 160 A |
| On-Resistance RDS(on) max | β | 9.6 mΞ© at VGS=10 V |
| Total Power Dissipation (Ptot, TC=25 Β°C) | β | 69 W |
| Gate Threshold Voltage VGS(th) | β | Logic-level (low single-volt range) |
| Diode Continuous Forward Current (IS) | β | 40 A (TC=25 Β°C) |
| Diode Forward Voltage (VSD) | β | 0.85 V typ, 1.2 V max at IF=20 A |
| Operating Temperature Range | β | -55 Β°C to +150 Β°C (junction) |
| Gate Drive | β | Logic-level compatible |
| ESD Protection | β | Yes (gate-integrated) |
| Packaging Code | β | ATMA1 (tape and reel) |