BSZ024N04LS6ATMA1 vs BSZ096N10LS5ATMA1 比較

詳細並排比較 BSZ024N04LS6ATMA1 由 Infineon 與 BSZ096N10LS5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSZ024N04LS6ATMA1 BSZ024N04LS6ATMA1 - 40V 24A OptiMOS 6 N-MOSFET | Infineon

BSZ024N04LS6ATMA1 - 40V 24A OptiMOS 6 N-MOSFET | Infineon

BSZ024N04LS6ATMA1 ✓ 啟用中

規格比較

參數 BSZ024N04LS6ATMA1 BSZ096N10LS5ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
電晶體類型 N-Channel MOSFET —
Technology OptiMOS 6 (shielded-gate trench) OptiMOS 5 trench MOSFET
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D, Ta) 24 A —
Continuous Drain Current (I_D, Tc) 40 A —
Pulsed Drain Current (I_DM) 130 A —
R_DS(on) Max @ V_GS=10V 2.4 mΩ —
R_DS(on) Max @ V_GS=4.5V [DATA_NEEDED: R_DS(on) at 4.5V] —
Gate Threshold Voltage (V_GS(th)) 2.3 V (typical) —
Total Gate Charge (Q_g) @ V_GS=10V 25 nC —
Input Capacitance (C_iss) 1.8 nF —
Output Capacitance (C_oss) 19 pF —
Power Dissipation (P_D, Ta) 2.5 W —
Power Dissipation (P_D, Tc) 75 W —
工作接面溫度 -55°C to +175°C —
封裝 PG-TSDSON-8-FL (3.3 mm x 3.3 mm) PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm)
安裝類型 Surface Mount, top-side drain pad Surface Mount
RoHS 狀態 Compliant Compliant
MSL 等級 1 (per JEDEC J-STD-020) —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 5
Polarity — N-Channel
Drain-Source Voltage (VDS max) — 100 V
Gate-Source Voltage (VGS max) — 20 V (typical)
Continuous Drain Current (ID, TC=25 °C) — 40 A
Maximum Silicon Drain Current (ID max) — 62 A
Pulse Drain Current (ID,pulse) — 160 A
On-Resistance RDS(on) max — 9.6 mΩ at VGS=10 V
Total Power Dissipation (Ptot, TC=25 °C) — 69 W
Gate Threshold Voltage VGS(th) — Logic-level (low single-volt range)
Diode Continuous Forward Current (IS) — 40 A (TC=25 °C)
Diode Forward Voltage (VSD) — 0.85 V typ, 1.2 V max at IF=20 A
工作溫度範圍 — -55 °C to +150 °C (junction)
Gate Drive — Logic-level compatible
ESD Protection — Yes (gate-integrated)
Packaging Code — ATMA1 (tape and reel)

資料表與資源

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