BSZ0501NSIATMA1 vs BSC0502NSIATMA1 Perbandingan

Perbandingan bersamaan detil BSZ0501NSIATMA1 dari Infineon dan BSC0502NSIATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSZ0501NSIATMA1 BSC0502NSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSZ0501NSIATMA1 —
Product Family OptiMOS 5 (25V/30V) —
FET Type N-Channel N-Channel
Drain-Source Voltage (Vds) 30 V —
Continuous Drain Current (Id) at TA=25C 25 A —
Continuous Drain Current (Id) at TC=25C 40 A —
Power Dissipation (Pd) at TA=25C 2.1 W —
Power Dissipation (Pd) at TC=25C 50 W —
Operating Mode Enhancement Mode —
Configuration Single with built-in diode —
Paket PG-TSDSON-8-FL (3.3 x 3.3 mm) PG-TDSON-8 (SuperSO8 5x6)
Tipe Mounting Surface Mount Surface Mount
Number of Terminals 8 —
JESD-609 Code e3 (matte tin) —
Level MSL [DATA_NEEDED: MSL rating] —
Rds(on) at Vgs=10V (typ) [DATA_NEEDED: Rds(on) value] —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th)] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] —
Rentang Suhu Kerja [DATA_NEEDED: Tj max] -55C to +150C
Status RoHS Compliant Compliant
Technology — OptiMOS 5 (Trench MOSFET)
Drain-Source Voltage (VDS) Max — 30 V
Continuous Drain Current (ID) at TC — 100 A
Continuous Drain Current (ID) at TA — 26 A
RDS(on) Max at VGS=10V — 2.3 mOhm
Gate Charge QG (0V to 4.5V) Typ — 9.0 nC
Output Charge QOSS Typ — 13.5 nC
Power Dissipation at TA (Ta=25C) — 2.5 W
Power Dissipation at TC (Tc=25C) — 43 W
Gate Threshold Voltage VGS(th) Typ — [DATA_NEEDED: VGS(th) typical value]

Spek dan Sumber

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