BSZ096N10LS5ATMA1 vs BSC094N06LS5ATMA1 Perbandingan
Perbandingan bersamaan detil BSZ096N10LS5ATMA1 dari Infineon dan BSC094N06LS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
BSZ096N10LS5ATMA1 - 100V 9.6mΩ OptiMOS 5 N-Channel MOSFET | Infineon
BSZ096N10LS5ATMA1 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | BSZ096N10LS5ATMA1 | BSC094N06LS5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | — |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS max) | 100 V | — |
| Gate-Source Voltage (VGS max) | 20 V (typical) | — |
| Continuous Drain Current (ID, TC=25 °C) | 40 A | — |
| Maximum Silicon Drain Current (ID max) | 62 A | — |
| Pulse Drain Current (ID,pulse) | 160 A | — |
| On-Resistance RDS(on) max | 9.6 mΩ at VGS=10 V | — |
| Total Power Dissipation (Ptot, TC=25 °C) | 69 W | — |
| Gate Threshold Voltage VGS(th) | Logic-level (low single-volt range) | — |
| Diode Continuous Forward Current (IS) | 40 A (TC=25 °C) | — |
| Diode Forward Voltage (VSD) | 0.85 V typ, 1.2 V max at IF=20 A | — |
| Paket | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | PG-TDSON-8-6 (SuperSO8 5x6) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55 °C to +150 °C (junction) | — |
| Technology | OptiMOS 5 trench MOSFET | OptiMOS™ 5 (logic-level) |
| Gate Drive | Logic-level compatible | — |
| ESD Protection | Yes (gate-integrated) | — |
| Status RoHS | Compliant | Compliant |
| Packaging Code | ATMA1 (tape and reel) | — |
| Part Number | — | BSC094N06LS5ATMA1 |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TC=25°C | — | 47 A |
| Continuous Drain Current (ID) at TC=100°C | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| RDS(on) max at VGS=10 V | — | 9.4 mΩ |
| RDS(on) max at VGS=4.5 V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/range] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typ] |
| Power Dissipation (PD) at TC=25°C | — | 36 W |
| Suhu Hubung Kerja | — | -55 °C to +150 °C |
| Level MSL | — | [DATA_NEEDED: MSL level] |