BSZ096N10LS5ATMA1 vs BSC094N06LS5ATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma BSZ096N10LS5ATMA1 tarafından Infineon ve BSC094N06LS5ATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
BSZ096N10LS5ATMA1 - 100V 9.6mΩ OptiMOS 5 N-Channel MOSFET | Infineon
BSZ096N10LS5ATMA1 ✓ Aktif
Özellik Karşılaştırması
| Parametre | BSZ096N10LS5ATMA1 | BSC094N06LS5ATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | — |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS max) | 100 V | — |
| Gate-Source Voltage (VGS max) | 20 V (typical) | — |
| Continuous Drain Current (ID, TC=25 °C) | 40 A | — |
| Maximum Silicon Drain Current (ID max) | 62 A | — |
| Pulse Drain Current (ID,pulse) | 160 A | — |
| On-Resistance RDS(on) max | 9.6 mΩ at VGS=10 V | — |
| Total Power Dissipation (Ptot, TC=25 °C) | 69 W | — |
| Gate Threshold Voltage VGS(th) | Logic-level (low single-volt range) | — |
| Diode Continuous Forward Current (IS) | 40 A (TC=25 °C) | — |
| Diode Forward Voltage (VSD) | 0.85 V typ, 1.2 V max at IF=20 A | — |
| Paket | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | PG-TDSON-8-6 (SuperSO8 5x6) |
| Montaj Türü | Surface Mount | Surface Mount |
| İşletim Sıcaklığı Aralığı | -55 °C to +150 °C (junction) | — |
| Technology | OptiMOS 5 trench MOSFET | OptiMOS™ 5 (logic-level) |
| Gate Drive | Logic-level compatible | — |
| ESD Protection | Yes (gate-integrated) | — |
| RoHS Durumu | Compliant | Compliant |
| Packaging Code | ATMA1 (tape and reel) | — |
| Part Number | — | BSC094N06LS5ATMA1 |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TC=25°C | — | 47 A |
| Continuous Drain Current (ID) at TC=100°C | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| RDS(on) max at VGS=10 V | — | 9.4 mΩ |
| RDS(on) max at VGS=4.5 V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/range] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typ] |
| Power Dissipation (PD) at TC=25°C | — | 36 W |
| İşletim Jant Sıcaklığı | — | -55 °C to +150 °C |
| MSL Seviyesi | — | [DATA_NEEDED: MSL level] |