EP4CE15F1717N vs EP4CE10F17C8N Perbandingan
Perbandingan bersamaan detil EP4CE15F1717N dari Intel dan EP4CE10F17C8N dari Altera. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | EP4CE15F1717N | EP4CE10F17C8N |
|---|---|---|
| Merek | Intel | Altera |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | Aktif | Aktif |
| Series | Cyclone IV E | — |
| Logic Elements (LE) | 15,408 | — |
| Embedded Memory | 516,096 bits (56 M9K blocks) | 423936 bits (414 Kbit) |
| Embedded 18x18 Multipliers | 56 | — |
| Maximum User I/Os | 165 | 179 |
| PLLs | 4 | 4 |
| Global Clock Networks | 20 | — |
| Process Technology | 60 nm low-power | 60 nm low-power SRAM |
| Core Voltage (VCCINT) | 1.0 V / 1.2 V | 1.15 V to 1.25 V |
| I/O Voltage (VCCIO) | 1.2 V / 1.8 V / 2.5 V / 3.0 V / 3.3 V | 1.2 V to 3.3 V |
| Suhu Kerja | 0C to +85C (commercial "N" suffix) | 0C to +85C (Commercial) |
| Paket | 256-ball F-BGA (FBGA-256) | 256-FBGA (F17), 17x17 mm |
| Package Pitch | 1.0 mm | — |
| LVDS Performance | Up to 343 Mbps | — |
| Speed Grade | 7 | — |
| Configuration Mode | External serial/parallel flash (volatile SRAM) | — |
| Status RoHS | Compliant | Compliant |
| Level MSL | 3 (168 hours) | — |
| Family | — | Cyclone IV E |
| Logic Elements (LEs) | — | 10320 |
| Embedded Multipliers (18x18) | — | 23 |
| Maximum Internal Frequency | — | 402 MHz |
| Configuration Method | — | SRAM, requires external EPCS/EPCQ flash |
| Tipe Mounting | — | Surface Mount (BGA) |