EP4CE15F1717N vs EP4CE10F17C8N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP4CE15F1717N sa pamamagitan ng Intel at EP4CE10F17C8N sa pamamagitan ng Altera. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP4CE15F1717N | EP4CE10F17C8N |
|---|---|---|
| Brand | Intel | Altera |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Series | Cyclone IV E | — |
| Logic Elements (LE) | 15,408 | — |
| Embedded Memory | 516,096 bits (56 M9K blocks) | 423936 bits (414 Kbit) |
| Embedded 18x18 Multipliers | 56 | — |
| Maximum User I/Os | 165 | 179 |
| PLLs | 4 | 4 |
| Global Clock Networks | 20 | — |
| Process Technology | 60 nm low-power | 60 nm low-power SRAM |
| Core Voltage (VCCINT) | 1.0 V / 1.2 V | 1.15 V to 1.25 V |
| I/O Voltage (VCCIO) | 1.2 V / 1.8 V / 2.5 V / 3.0 V / 3.3 V | 1.2 V to 3.3 V |
| Temperature na Operasyon | 0C to +85C (commercial "N" suffix) | 0C to +85C (Commercial) |
| Packhaging | 256-ball F-BGA (FBGA-256) | 256-FBGA (F17), 17x17 mm |
| Package Pitch | 1.0 mm | — |
| LVDS Performance | Up to 343 Mbps | — |
| Speed Grade | 7 | — |
| Configuration Mode | External serial/parallel flash (volatile SRAM) | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 3 (168 hours) | — |
| Family | — | Cyclone IV E |
| Logic Elements (LEs) | — | 10320 |
| Embedded Multipliers (18x18) | — | 23 |
| Maximum Internal Frequency | — | 402 MHz |
| Configuration Method | — | SRAM, requires external EPCS/EPCQ flash |
| Uri ng Pagpapasok | — | Surface Mount (BGA) |