EP4CE75F29I7 vs EP4CE75F23I7N Perbandingan
Perbandingan bersamaan detil EP4CE75F29I7 dari Intel dan EP4CE75F23I7N dari Intel. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | EP4CE75F29I7 | EP4CE75F23I7N |
|---|---|---|
| Merek | Intel | Intel |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | Aktif | Aktif |
| Series | Cyclone IV E | — |
| Manufacturer | Intel (formerly Altera) | — |
| Logic Elements (LEs) | 75,408 | 75,408 |
| Embedded Memory (bits) | 2,810,880 | — |
| Embedded Memory Blocks | 274 (M9K) | — |
| Embedded 18×18 Multipliers | 200 | — |
| PLLs | 4 | 4 |
| User I/O Count | 426 | — |
| Paket | 780-ball FBGA (FineLine BGA) | 484-ball FBGA (F23, 23 mm body, 1.0 mm pitch) |
| Suhu Kerja | -40 °C to +100 °C (Industrial) | — |
| Process Node | 60 nm low-power CMOS | — |
| Core Voltage (VCCINT) | 1.0 V / 1.2 V selectable | 1.2 V nominal |
| Configuration Modes | JTAG, Active Serial (AS), Passive Serial (PS) | Active Serial (AS), Passive Serial (PS), JTAG |
| I/O Standards Supported | LVDS, LVTTL, LVCMOS, SSTL, HSTL | — |
| External Memory Interfaces | DDR/DDR2 SDRAM, QDRII SRAM | DDR / DDR2 SDRAM, QDRII SRAM |
| Status RoHS | Compliant | Compliant |
| Level MSL | 3 (168 hours) | — |
| Tipe Mounting | Surface Mount (BGA) | — |
| Product Line | — | Cyclone IV E |
| Family | — | Cyclone IV E (EP4CE) |
| Logic Array Blocks (LABs) | — | 4,713 |
| Embedded Memory Bits | — | 2,810,880 bits (312 M9K blocks) |
| Distributed RAM Bits | — | 200 Kbits |
| Embedded 18x18 Multipliers | — | 15 |
| Global Clocks | — | [DATA_NEEDED: global clock network count] |
| Maximum User I/Os | — | 292 |
| I/O Voltage (VCCIO) | — | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V (per bank) |
| Process Technology | — | 60 nm low-power CMOS |
| Operating Temperature Grade | — | Industrial (I7: -40C to +100C Tj) |
| Design Software | — | Quartus II / Quartus Prime |