H58G56AK6QX032 vs H58G66CK8BX147N Perbandingan

Perbandingan bersamaan detil H58G56AK6QX032 dari SK hynix dan H58G66CK8BX147N dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum H58G56AK6QX032 H58G66CK8BX147N
Merek SK hynix SK hynix
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Tipe Memori LPDDR5 SDRAM (DRAM) LPDDR5X SDRAM
Density 32 Gbit (4 GB) 64 Gbit (8 GB)
Organisasi 512M x64 x8 (single channel)
Laju Data 6400 Mbps/pin —
Core Supply Voltage (VDD) 1.05 V —
I/O Supply Voltage (VDDQ) 0.5 V —
Interface Supply (VDD2) 1.8 V —
Bus Width 64-bit (x64) —
Peak Bandwidth (per device) 51.2 GB/s —
Grade Automotive —
Paket 315-ball FBGA 315-ball FBGA
Tipe Mounting Surface Mount (BGA) Surface Mount
Suhu Kerja [DATA_NEEDED: Operating Temperature Range] [DATA_NEEDED: Operating Temperature Range]
Generation LPDDR5 (JEDEC LPDDR5 standard) —
Application Domain Automotive / Industrial / Computing Smartphone, AI edge, server-class mobile computing
Status RoHS [DATA_NEEDED: RoHS Status] [DATA_NEEDED: RoHS Status]
Level MSL [DATA_NEEDED: Moisture Sensitivity Level] —
Maximum Data Rate — 8533 Mbps
Supply Voltage Domain — 0.5 V to 1.8 V
Core Voltage Class — 1.05 V (LPDDR5/LPDDR5X class)
Standard Compliance — JEDEC-compliant single-channel SDRAM (per SK hynix 315-ball FBGA specification)
Antarmuka — LPDDR5/LPDDR5X protocol
Channel Configuration — Single channel (x8 or x16 capable family)
Power Management — Dynamic voltage and frequency scaling (DVFSC/DVFSQ)
Refresh Scheme — LPDDR5 per-bank / all-bank refresh

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