H5AN4G6NBJR-PBC vs H5ANAG6NBJR-UHC Perbandingan

Perbandingan bersamaan detil H5AN4G6NBJR-PBC dari SK hynix dan H5ANAG6NBJR-UHC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

SK hynix
H5ANAG6NBJR-UHC H5ANAG6NBJR-UHC - 4Gb DDR4 SDRAM x16 | SK Hynix

H5ANAG6NBJR-UHC - 4Gb DDR4 SDRAM x16 | SK Hynix

H5ANAG6NBJR-UHC ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum H5AN4G6NBJR-PBC H5ANAG6NBJR-UHC
Merek SK hynix SK hynix
Kategori Memory ICs DRAM
Status Lingkungan Hidup Aktif Aktif
Tipe Memori DDR4 SDRAM DDR4 SDRAM
Memory Density 4 Gbit —
Organisasi 256M x 16 (268435456 words x 16 bits) 256M x 16
Supply Voltage (VDD) 1.2 V —
Antarmuka DDR4 (double data rate, synchronous) DDR4 (CMOS)
Package Code TFBGA —
Paket FBGA-96 (PBGA96), rectangular PBGA96 / FBGA-96 (TFBGA)
Number of Terminals 96 —
Tipe Mounting Surface Mount —
Fitur Auto self-refresh, data mask, asynchronous reset, dynamic ODT, ZQ calibration, write leveling, CRC —
Suhu Kerja [DATA_NEEDED: temperature range for -C grade] -40C to +95C
Data Rate / Speed Grade [DATA_NEEDED: speed grade PBC data rate] —
Latensi CAS [DATA_NEEDED: CAS latency for PBC speed grade] [DATA_NEEDED: CAS Latency]
Process CMOS —
Lead-Free / Halogen-Free Yes (per family datasheet, Lead-Free & Halogen-Free) —
Temperature Grade OTHER (per distributor listing) —
Density — 4 Gb
Package Dimensions — 13 mm length (per JESD-30 R-PBGA-B96)
Access Mode — Multi Bank, Page Burst
Refresh — Auto / Self Refresh
Data Mask — Supported (DM function)
Asynchronous Reset — Supported
On-Chip Termination — Dynamic ODT
ZQ Calibration — Supported
Write Leveling — Supported
CRC — Supported
Supply Voltage Class — DDR4 (1.2 V class)
Status RoHS — RoHS Compliant
REACH Compliance — Compliant
ECCN — EAR99
HTS Code — 8542.32.00.36
Max Data Rate — [DATA_NEEDED: Max Data Rate]

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