H5AN4G6NBJR-RDC vs H5AN4G6NBJR-VKC Perbandingan

Perbandingan bersamaan detil H5AN4G6NBJR-RDC dari SK hynix dan H5AN4G6NBJR-VKC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum H5AN4G6NBJR-RDC H5AN4G6NBJR-VKC
Merek SK hynix SK hynix
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Tipe Memori DDR4 SDRAM DDR4 SDRAM
Density 4 Gb —
Organisasi 256M x 16 —
Tegangan Pemuat 1.2 V —
Antarmuka CMOS, fully synchronous Parallel
Package Code TFBGA (FBGA-96) —
Package Shape Rectangular —
Package Width 7.5 mm —
Number of Terminals 96 —
Tipe Mounting Surface Mount Surface Mount
Temperature Grade OTHER (per Partstack listing); -I industrial option -40C to +95C per family datasheet —
Self Refresh Auto / Self Refresh —
Data Mask Function Yes —
Asynchronous Reset Yes —
On-Die Termination Dynamic ODT —
ZQ Calibration Yes —
Write Leveling Yes —
CRC Function Yes —
Lead-Free / Halogen-Free Yes (per datasheet cover: Lead-Free & Halogen-Free) —
Speed Grade -RDC (see manufacturer datasheet for validated data-rate bin) —
Ukuran Memori — 4 Gbit
Memory Organization — 256M x 16
Laju Data — 2666 Mbps
Clock Frequency — 1.6 GHz (internal reference per distributor data)
Supply Voltage (VDD) — 1.2 V nominal (1.14 V to 1.26 V)
Operating Current — 38 mA (typical, per distributor data)
Technology — CMOS
Suhu Kerja — -40C to +95C
Paket — FBGA-96 / TFBGA (PBGA96)
Body Size — 13 mm, 1.2 mm profile, 0.8 mm ball pitch
Termination — Dynamic on-chip termination (ODT)
Calibration — ZQ calibration; write leveling
Protection Functions — Asynchronous reset; CRC; data mask
Refresh — Auto self-refresh
Status RoHS — Compliant
Packaging — Tray

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