H5AN8G8NCJR-XNC vs H5ANAG8NBJR-RDC Perbandingan

Perbandingan bersamaan detil H5AN8G8NCJR-XNC dari SK hynix dan H5ANAG8NBJR-RDC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

SK hynix
H5ANAG8NBJR-RDC H5ANAG8NBJR-RDC - 16Gb DDR4 SDRAM 2Gx8 2666 | SK hynix

H5ANAG8NBJR-RDC - 16Gb DDR4 SDRAM 2Gx8 2666 | SK hynix

H5ANAG8NBJR-RDC ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum H5AN8G8NCJR-XNC H5ANAG8NBJR-RDC
Merek SK hynix SK hynix
Kategori Memory ICs DRAM
Status Lingkungan Hidup Aktif Aktif
Harga Unit (USD) $30,69 —
Tipe Memori DDR4 SDRAM DDR4 SDRAM
Ukuran Memori 8 Gbit —
Organisasi 1 Gb x 8 2G x 8
Laju Data 3200 Mbps (DDR4-3200) —
Clock Frequency 1.6 GHz —
Tegangan Pemuat 1.14 V to 1.26 V (1.2 V nominal) —
Paket 78-ball FBGA, 7.5 mm x 11 mm 78-ball FBGA
Suhu Kerja 0 C to +85 C [DATA_NEEDED: Operating Temperature Range]
Tipe Mounting Surface Mount Surface Mount
Antarmuka DDR4 (8-bit data interface) SSTL12
Architecture Bank-group based DDR4 —
Refresh Auto self-refresh Self-refresh and auto-refresh (8K/64ms class per family datasheet)
Precharge Auto precharge —
On-Chip Termination Dynamic ODT —
Calibration ZQ calibration, write leveling —
Error Handling CRC function —
Reset Asynchronous reset —
Data Mask Data mask function —
Current - Operating 39 mA —
Current - Standby 30 mA —
Status RoHS Compliant Compliant (lead-free PBGA per family product data)
Lead-Free / Halogen-Free Yes —
Density — 16 Gbit
Supply Voltage (VDD) — 1.2 V
I/O Voltage (VDDQ) — 1.2 V
Speed Grade (suffix R) — DDR4-2666 class
Bank Groups — 4 (per 16Gb DDR4 family datasheet)
Data Strobe — DQS with read/write training
Data Bus Inversion — Supported (DBI)
Latensi CAS — [DATA_NEEDED: CAS Latency]
Status Lingkungan Hidup — Active

Spek dan Sumber

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