H5ANAG6NBJR-RDC vs H5ANAG4NBJR-RDC Perbandingan
Perbandingan bersamaan detil H5ANAG6NBJR-RDC dari SK hynix dan H5ANAG4NBJR-RDC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | H5ANAG6NBJR-RDC | H5ANAG4NBJR-RDC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Memory Organization | 16Gb x16 | — |
| Density | 16 Gb | 16 Gb (2 GB) |
| Laju Data | 2666 Mbps (speed grade -RDC) | 2666 MT/s (speed bin NBJR, [DATA_NEEDED: exact MT/s confirmation from datasheet]) |
| Supply Voltage (VDD) | 1.2 V | — |
| Antarmuka | Synchronous, double data rate | SSTL-12 |
| Clocking | Fully synchronous to both clock edges | — |
| Paket | FBGA (Ball Grid Array), surface mount | 78-ball FBGA |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | CMOS | — |
| Standard | JEDEC DDR4 SDRAM | — |
| Application | Main memory | — |
| Suhu Kerja | [DATA_NEEDED: Operating Temperature Range] | — |
| On-Die Termination (ODT) | Supported (DDR4 feature) | — |
| Bank Group Architecture | DDR4 bank groups (per JEDEC DDR4) | — |
| Status RoHS | [DATA_NEEDED: RoHS Status] | Compliant (lead-free / halogen-free per RDC suffix) |
| Organisasi | — | 4G x 4 |
| Supply Voltage VDD | — | 1.2 V |
| Prefetch | — | 16n (bank group architecture) |
| Fitur | — | Bank groups, CA parity, data CRC, ODT, DLL-off mode |
| Refresh | — | Self refresh, 8n refresh [DATA_NEEDED: 1x/2x/4x refresh option] |
| Operating Temperature (case) | — | -40C to +85C (industrial; extended to 95C per datasheet conditions) |
| Temperature Grade Suffix | — | RDC - industrial temperature, lead-free, halogen-free |
| VDDQ | — | 1.2 V |
| Product Family | — | SK hynix computing 16Gb DDR4 H5ANAG4(8_6)NBJR series |