H5ANAG6NBJR-RDC vs H5ANAG4NBJR-RDC 比較
詳細並排比較 H5ANAG6NBJR-RDC 由 SK hynix 與 H5ANAG4NBJR-RDC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5ANAG6NBJR-RDC | H5ANAG4NBJR-RDC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | DRAM | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Memory Organization | 16Gb x16 | — |
| Density | 16 Gb | 16 Gb (2 GB) |
| 資料速率 | 2666 Mbps (speed grade -RDC) | 2666 MT/s (speed bin NBJR, [DATA_NEEDED: exact MT/s confirmation from datasheet]) |
| Supply Voltage (VDD) | 1.2 V | — |
| 介面 | Synchronous, double data rate | SSTL-12 |
| Clocking | Fully synchronous to both clock edges | — |
| 封裝 | FBGA (Ball Grid Array), surface mount | 78-ball FBGA |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | CMOS | — |
| Standard | JEDEC DDR4 SDRAM | — |
| Application | Main memory | — |
| 工作溫度 | [DATA_NEEDED: Operating Temperature Range] | — |
| On-Die Termination (ODT) | Supported (DDR4 feature) | — |
| Bank Group Architecture | DDR4 bank groups (per JEDEC DDR4) | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS Status] | Compliant (lead-free / halogen-free per RDC suffix) |
| 組織 | — | 4G x 4 |
| Supply Voltage VDD | — | 1.2 V |
| Prefetch | — | 16n (bank group architecture) |
| 功能特色 | — | Bank groups, CA parity, data CRC, ODT, DLL-off mode |
| Refresh | — | Self refresh, 8n refresh [DATA_NEEDED: 1x/2x/4x refresh option] |
| Operating Temperature (case) | — | -40C to +85C (industrial; extended to 95C per datasheet conditions) |
| Temperature Grade Suffix | — | RDC - industrial temperature, lead-free, halogen-free |
| VDDQ | — | 1.2 V |
| Product Family | — | SK hynix computing 16Gb DDR4 H5ANAG4(8_6)NBJR series |