H5ANAG6NCMR-XNI vs H5ANAG6NCJR-XNC Perbandingan
Perbandingan bersamaan detil H5ANAG6NCMR-XNI dari SK hynix dan H5ANAG6NCJR-XNC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | H5ANAG6NCMR-XNI | H5ANAG6NCJR-XNC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | — | In Stock |
| Harga Unit (USD) | — | $68,91 |
| Tipe Memori | DDR4 SDRAM (volatile DRAM) | DDR4 SDRAM |
| Ukuran Memori | 16 Gb | 16 Gbit |
| Memory Organization | 1G x 16 | 1G x 16 |
| Laju Data | 3200 Mbps (DDR4-3200, XN speed bin) | 3200 Mbps/pin |
| Tegangan Pemuat | 1.2 V | — |
| Technology | CMOS Double Data Rate IV Synchronous DRAM | — |
| Power Class | Normal Power | — |
| Paket | FBGA-96 | FBGA-96 |
| Tipe Mounting | Surface Mount | Surface Mount |
| Antarmuka | Parallel (DDR4) | Parallel |
| Product Status | Active | — |
| Application Domain | Main memory, industrial controllers, computing modules, consumer electronics | — |
| Memory Format | DRAM | — |
| Speed Bin Family | UH/VK/WM/XN | — |
| Suhu Kerja | [DATA_NEEDED: Operating Temperature] | — |
| VPP Supply Voltage | [DATA_NEEDED: VPP Supply Voltage] | — |
| Level MSL | [DATA_NEEDED: MSL Level] | — |
| Supply Voltage Range | — | 1.14 V to 1.26 V (VDD/VDDQ) |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask Function | — | Yes |
| Dynamic On-Chip Termination (ODT) | — | Yes |
| ZQ Calibration | — | Yes |
| CRC Function | — | Yes |
| Write Leveling | — | Yes |
| Packaging | — | Tray |
| Status RoHS | — | Compliant |