H5TC4G63CFR-PBL vs MT41K256M16RE-125:D Perbandingan
Perbandingan bersamaan detil H5TC4G63CFR-PBL dari SK hynix dan MT41K256M16RE-125:D dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Micron Technology
MT41K256M16RE-125:D - 4Gb DDR3L SDRAM 256Mx16 | Micron
MT41K256M16RE-125:D ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | H5TC4G63CFR-PBL | MT41K256M16RE-125:D |
|---|---|---|
| Merek | SK hynix | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR3L SDRAM | DDR3L SDRAM |
| Ukuran Memori | 4 Gb (256M x 16) | — |
| Tegangan Pemuat | 1.35 V | 1.35 V |
| Laju Data | 1600 Mbps (PC3L-12800) | 1600 MT/s |
| Paket | 96-ball FBGA (TFBGA) | FBGA-96 (9x14 mm) |
| Number of Terminals | 96 | — |
| Package Shape | RECTANGULAR | — |
| Terminal Form | BALL | — |
| Burst Length | 8 | 8, 4 |
| Latensi CAS | 11, 12, 13 | 11 |
| Number of Banks | 8 | — |
| Refresh Period | 7.8 us at 85C | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Bebas Halogen | Yes | — |
| Density | — | 4 Gb |
| Organisasi | — | 256M x 16 |
| Suhu Kerja | — | 0C to +95C (TC) |
| On-Die Termination | — | Yes |
| Auto-Refresh | — | Yes |
| Self-Refresh | — | Yes |
| Ball Pitch | — | 0.8 mm |