MT41K256M16RE-125:D - 4Gb DDR3L SDRAM 256Mx16 | Micron
MPN: MT41K256M16RE-125:D ✓ AktifMT41K256M16RE-125:D Ringkasan
DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that operates at 1.35V, reducing power consumption by about 20% compared to standard 1.5V DDR3. It is part of the DDR3 family, which uses double data rate signaling to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is backward compatible with DDR3 and is widely used in servers, laptops, and embedded systems.
Key features include a 4Gb density, 256Mx16 organization, 1.35V supply voltage, and a CAS latency of 11 (CL11) at 1600 MT/s. The device supports on-die termination (ODT), programmable CAS latency, and burst lengths of 8 and 4. It also features auto-refresh and self-refresh modes for power saving. The FBGA-96 package offers excellent thermal and electrical performance, making it suitable for space-constrained designs.
Technically, the MT41K256M16RE-125:D uses Micron's advanced DRAM process technology, providing high reliability and low leakage. The device includes a temperature-compensated self-refresh (TCSR) feature that adjusts refresh rate based on temperature, enhancing data integrity. The 1.35V operation reduces I/O power, and the 96-ball FBGA package with a 0.8mm ball pitch ensures good signal integrity.
Typical applications include DDR3L memory modules for servers, networking equipment, industrial PCs, and embedded systems. It is also used in consumer electronics like set-top boxes and routers. The low voltage and high density make it ideal for power-sensitive designs.
When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.35V supply and a reference voltage (VREF) for the I/O.
Alternatif penggantian untuk MT41K256M16RE-125:D — paket yang sama, pin-pada-pin kompatibel. Bagian paket yang berbeda memerlukan kerja ulang PCB diabaikan.
Variasi di dalam seri ini
Model-series yang sama yang kompatibel dengan penggantian MT41K256M16RE-125:D (sama faktor bentuk dan footprint) — berbeda di dalam Package, CAS Latency, Data Rate, Memory Size, Operating Temperature.
MT41K256M16RE-15E:D
✅ Drop-InKontak untuk harga
Lihat Datasheet →MT41K256M16HA-125:E
✅ Drop-InKontak untuk harga
Lihat Datasheet →MT41K256M16TG-125
✅ Drop-InKontak untuk harga
Lihat Datasheet →MT41K256M16HA-125
✅ Drop-InKontak untuk harga
Lihat Datasheet →IS43TR16256A-125KBLA2
✅ Drop-In ⚠️ Spesifikasi Tidak Disahkan📋 Alternatif referensi (tidak dalam katalog)
K4B4G1646D-BYH9
✅ Drop-In ⚠️ Spesifikasi Tidak DisahkanKontak untuk harga
Lihat Datasheet →H5TC4G63CFR-PBL
✅ Drop-In ⚠️ Spesifikasi Tidak DisahkanKontak untuk harga
Lihat Datasheet →NT5CB256M16CP-EK
✅ Drop-In ⚠️ Spesifikasi Tidak DisahkanKontak untuk harga
Lihat Datasheet →MT41K256M16RE-125:D Rating Maksimal & Karakteristik Listrik
| Tipe Memori | DDR3L SDRAM |
| Density | 4 Gb |
| Organisasi | 256M x 16 |
| Tegangan Pemuat | 1.35 V |
| Laju Data | 1600 MT/s |
| Latensi CAS | 11 |
| Paket | FBGA-96 (9x14 mm) |
| Suhu Kerja | 0C to +95C (TC) |
| RoHS | Compliant |
| Lead-Free | Yes |
| Burst Length | 8, 4 |
| On-Die Termination | Yes |
| Auto-Refresh | Yes |
| Self-Refresh | Yes |
| Ball Pitch | 0.8 mm |
Konfigurasi Pin MT41K256M16RE-125:D
| Pin produk A1 | VDD — Power supply (1.35V) |
| Pin produk A2 | DQ0 — Data input/output 0 |
| Pin produk A3 | DQ1 — Data input/output 1 |
| Pin produk A4 | VSS — Ground |
| Pin produk A5 | DQ2 — Data input/output 2 |
| Pin produk A6 | DQ3 — Data input/output 3 |
| Pin produk A7 | VDD — Power supply (1.35V) |
| Pin produk A8 | DQ4 — Data input/output 4 |
| Pin produk A9 | DQ5 — Data input/output 5 |
| Pin produk A10 | VSS — Ground |
| Pin produk A11 | DQ6 — Data input/output 6 |
| Pin produk A12 | DQ7 — Data input/output 7 |
| Pin produk B1 | VDDQ — I/O power supply (1.35V) |
| Pin produk B2 | DQ8 — Data input/output 8 |
| Pin produk B3 | DQ9 — Data input/output 9 |
| Pin produk B4 | VSSQ — I/O ground |
| Pin produk B5 | DQ10 — Data input/output 10 |
| Pin produk B6 | DQ11 — Data input/output 11 |
| Pin produk B7 | VDDQ — I/O power supply (1.35V) |
| Pin produk B8 | DQ12 — Data input/output 12 |
| Pin produk B9 | DQ13 — Data input/output 13 |
| Pin produk B10 | VSSQ — I/O ground |
| Pin produk B11 | DQ14 — Data input/output 14 |
| Pin produk B12 | DQ15 — Data input/output 15 |
Aplikasi Umum
MT41K256M16RE-125:D cocok untuk 6 aplikasis: Server Memory Modules, Networking Equipment, Industrial PCs, Consumer Electronics, Embedded Systems, Data Storage Systems.
Server Memory Modules
The MT41K256M16RE-125:D is ideal for server memory modules (DIMMs) where high density and low power are critical. Its 4Gb density and 1.35V operation reduce power consumption in data centers, while the 1600 MT/s data rate provides sufficient bandwidth for server workloads. The FBGA-96 package allows for compact module designs, and the device's on-die termination improves signal integrity in multi-rank configurations.
Direkomendasikan
Networking Equipment
In networking equipment such as routers and switches, the MT41K256M16RE-125:D provides high-speed packet buffering and routing table storage. Its 1600 MT/s data rate ensures low latency for data forwarding, while the 1.35V supply reduces power dissipation in always-on network devices. The device's self-refresh mode helps maintain data integrity during idle periods, and the FBGA-96 package fits well on dense PCB layouts.
Direkomendasikan
Industrial PCs
Industrial PCs require reliable memory that can operate in harsh environments. The MT41K256M16RE-125:D operates over a temperature range of 0C to +95C, making it suitable for industrial applications. Its low 1.35V operation reduces heat generation, and the FBGA-96 package provides robust solder joints. The device's auto-refresh and self-refresh features ensure data retention in power-cycled systems.
Direkomendasikan
Consumer Electronics
In consumer electronics like set-top boxes and smart TVs, the MT41K256M16RE-125:D offers a balance of performance and power efficiency. Its 4Gb density supports high-definition video streaming and multitasking, while the 1.35V supply extends battery life in portable devices. The FBGA-96 package is compact, enabling slim device designs. The device's low power consumption also reduces heat, improving reliability.
Direkomendasikan
Embedded Systems
Embedded systems, such as those in automotive infotainment and medical devices, benefit from the MT41K256M16RE-125:D's low power and high density. The 1.35V operation is ideal for battery-powered devices, and the 1600 MT/s data rate supports real-time processing. The FBGA-96 package is suitable for space-constrained PCBs, and the device's temperature range covers most embedded environments. Its self-refresh mode is crucial for low-power standby states.
Direkomendasikan
Data Storage Systems
In data storage systems like SSDs and NAS devices, the MT41K256M16RE-125:D is used for caching and buffering. Its high density (4Gb) allows for large cache sizes, improving read/write performance. The 1.35V supply reduces power consumption in storage arrays, and the 1600 MT/s data rate ensures fast data transfer. The FBGA-96 package is compatible with standard PCB assembly processes, and the device's reliability is critical for 24/7 operation.
Direkomendasikan
Ringkasan Produk Direkomendasikan
Data referensi engineering untuk MT41K256M16RE-125:D — pembandingan, panduan desain, dan informasi konformitas.
Panduan Pemilihan
Pembandingan dengan Alternatif
| Parameter Umum | Produk Ini | MT41K256M16RE-15E:D | MT41K256M16HA-125:E | IS43TR16256A-125KBLA2 |
|---|---|---|---|---|
| Package | FBGA-96 | FBGA-96 | FBGA-96 | FBGA-96 |
| Brand | Micron | Micron | Micron | ISSI |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Data Rate | 1600 MT/s | 1333 MT/s | 1600 MT/s | 1600 MT/s |
| CAS Latency | 11 | 9 | 11 | 11 |
| RoHS | Compliant | Compliant | Compliant | Compliant |
Diferensiator Kunci
- Lower voltage operation (1.35V) compared to standard DDR3 (vsMT41K256M16TG-125)
- Higher data rate (1600 MT/s) than the -15E variant (vsMT41K256M16RE-15E:D)
- Same package and pinout as other Micron 4Gb DDR3L parts (vsMT41K256M16HA-125:E)
Catatan Desain
Ensure a stable 1.35V supply with low ripple. Use a dedicated voltage regulator for VDD and VDDQ, and place 0.1uF and 1uF decoupling capacitors close to each power pin. The VREF should be generated from a precision divider and bypassed with 0.1uF capacitor.
Follow the layout guidelines in the Micron datasheet for DDR3L routing. Maintain controlled impedance for DQ, DQS, and address/command lines. Keep trace lengths matched within 50 mils for each byte lane. Use ground planes to minimize noise and ensure proper signal integrity.
The FBGA-96 package has a thermal resistance of approximately 20C/W. For high-temperature environments, ensure adequate airflow or a heatsink. The maximum operating temperature is 95C, so calculate the power dissipation and verify the junction temperature stays within limits.
Informasi Konformitas
RoHS compliant and lead-free per datasheet. Other compliance details not specified in the provided data.
