IAUC100N04S6N028ATMA1 vs IAUC50N08S5L096ATMA1 Perbandingan
Perbandingan bersamaan detil IAUC100N04S6N028ATMA1 dari Infineon dan IAUC50N08S5L096ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6N028ATMA1 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | IAUC100N04S6N028ATMA1 | IAUC50N08S5L096ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 40V | — |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D) at T_C=25°C | 100 A | — |
| Pulsed Drain Current (I_DM) | 400 A | — |
| R_DS(on) max @ V_GS=10V | 2.8 mΩ (typical) | — |
| Gate Threshold Voltage (V_GS(th)) | 1.5 V to 2.5 V | — |
| Total Gate Charge (Q_g) | [DATA_NEEDED: Q_g in nC] | — |
| Power Dissipation (P_D) at T_C=25°C | 62 W | — |
| Rentang Suhu Kerja | -55 °C to +175 °C | -55°C to +175°C |
| Paket | PG-TDSON-8 (TDSON-8) | PG-TDSON-8-33 (5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Automotive Qualified | Yes | — |
| Status RoHS | Compliant | Compliant |
| Product Series | — | OptiMOS 5 |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) | — | 50 A (Tc) |
| Pulsed Drain Current (IDM) | — | 200 A |
| On-Resistance (RDS(on)) | — | 9.6 mΩ max @ VGS=10V, ID=25A |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Power Dissipation (PD) | — | 60 W (Tc) |
| Automotive Qualification | — | AEC-Q101 |
| Lead-Free | — | Yes |
| Level MSL | — | [DATA_NEEDED: MSL level] |