IAUC100N04S6N028ATMA1 vs IAUC50N08S5L096ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC100N04S6N028ATMA1 disebabkan oleh Infineon dan IAUC50N08S5L096ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6N028ATMA1 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | IAUC100N04S6N028ATMA1 | IAUC50N08S5L096ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 40V | — |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D) at T_C=25°C | 100 A | — |
| Pulsed Drain Current (I_DM) | 400 A | — |
| R_DS(on) max @ V_GS=10V | 2.8 mΩ (typical) | — |
| Gate Threshold Voltage (V_GS(th)) | 1.5 V to 2.5 V | — |
| Total Gate Charge (Q_g) | [DATA_NEEDED: Q_g in nC] | — |
| Power Dissipation (P_D) at T_C=25°C | 62 W | — |
| Gambaran Suhu Operasi | -55 °C to +175 °C | -55°C to +175°C |
| Kemasan | PG-TDSON-8 (TDSON-8) | PG-TDSON-8-33 (5x6 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Automotive Qualified | Yes | — |
| Status RoHS | Compliant | Compliant |
| Product Series | — | OptiMOS 5 |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) | — | 50 A (Tc) |
| Pulsed Drain Current (IDM) | — | 200 A |
| On-Resistance (RDS(on)) | — | 9.6 mΩ max @ VGS=10V, ID=25A |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Power Dissipation (PD) | — | 60 W (Tc) |
| Automotive Qualification | — | AEC-Q101 |
| Lead-Free | — | Yes |
| Aras MSL | — | [DATA_NEEDED: MSL level] |