IAUC100N10S5L040ATMA1 vs IAUC100N10S5N040ATMA1 Perbandingan

Perbandingan bersamaan detil IAUC100N10S5L040ATMA1 dari Infineon dan IAUC100N10S5N040ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUC100N10S5L040ATMA1 IAUC100N10S5N040ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Family OptiMOST 5 Power-Transistor (IAUC) —
Tipe Transistor N-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at Tc 100 A —
Pulsed Drain Current (IDM) 400 A 400 A
On-State Resistance RDS(on) max 4 mOhm —
Gate Threshold Voltage VGS(th) Logic Level —
Continuous Power Dissipation (Tc) 167 W —
Paket PG-TDSON-8-34 (SuperSO8 5x6 mm) PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55 C to +175 C (junction) -55C to +175C (junction)
MSL Moisture Sensitivity MSL1 (up to 260 C peak reflow) —
Automotive Qualification AEC-Q101 qualified AEC-Q100 qualified
Avalanche Tested 100% production avalanche tested —
AOI Compatibility Feasible for automatic optical inspection Feasible for Automatic Optical Inspection
FET Type — N-Channel, Enhancement Mode
Technology — OptiMOS-5
Continuous Drain Current (ID) @ TC=25C — 100 A (package-limited)
RDS(on) max @ VGS=10V — 4 mΩ
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg value]
Maximum Power Dissipation (PD) — 167 W @ TC=25C
Thermal Resistance, Junction-to-Case (RthJC) — 0.9 K/W
Level MSL — MSL1 (up to 260C peak reflow)
Avalanche Rating — 100% Avalanche tested
Status RoHS — Compliant

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