IAUC100N10S5L040ATMA1 vs IAUC60N04S6L030HATMA1 Perbandingan
Perbandingan bersamaan detil IAUC100N10S5L040ATMA1 dari Infineon dan IAUC60N04S6L030HATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUC100N10S5L040ATMA1 - 100V 4mΩ 100A N-Channel MOSFET | Infineon
IAUC100N10S5L040ATMA1 ✓ AktifInfineon
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
IAUC60N04S6L030HATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IAUC100N10S5L040ATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOST 5 Power-Transistor (IAUC) | — |
| Tipe Transistor | N-Channel Enhancement Mode MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | 40 V |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Pulsed Drain Current (IDM) | 400 A | — |
| On-State Resistance RDS(on) max | 4 mOhm | — |
| Gate Threshold Voltage VGS(th) | Logic Level | — |
| Continuous Power Dissipation (Tc) | 167 W | — |
| Paket | PG-TDSON-8-34 (SuperSO8 5x6 mm) | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55 C to +175 C (junction) | — |
| MSL Moisture Sensitivity | MSL1 (up to 260 C peak reflow) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 (per part number suffix) |
| Avalanche Tested | 100% production avalanche tested | — |
| AOI Compatibility | Feasible for automatic optical inspection | — |
| Part Series | — | OptiMOS 6 |
| Configuration | — | Half-Bridge (2 N-Channel) |
| Continuous Drain Current (ID) at TJ | — | 60 A |
| On-Resistance R_DS(on) at VGS=10V | — | 3.0 mOhm (typical) |
| Total Gate Charge (Qg) at VGS=10V | — | 35 nC |
| Output Capacitance (Coss) | — | 2.128 nF |
| Reverse Transfer Capacitance (Crss) | — | 596 pF |
| Gate Threshold Voltage (VGS(th)) | — | 2 V |
| Maximum Power Dissipation (PD) at TC | — | 75 W |
| Suhu Hubung Kerja | — | -55 C to +175 C |
| Status RoHS | — | Compliant |
| Level MSL | — | 1 (per JEDEC J-STD-020) |