IAUC100N10S5N040ATMA1 vs BSC117N08NS5ATMA1 Perbandingan

Perbandingan bersamaan detil IAUC100N10S5N040ATMA1 dari Infineon dan BSC117N08NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSC117N08NS5ATMA1 BSC117N08NS5ATMA1 - 80V 49A OptiMOS 5 N-FET | Infineon

BSC117N08NS5ATMA1 - 80V 49A OptiMOS 5 N-FET | Infineon

BSC117N08NS5ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUC100N10S5N040ATMA1 BSC117N08NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel, Enhancement Mode —
Technology OptiMOS-5 OptiMOS 5
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) @ TC=25C 100 A (package-limited) —
Pulsed Drain Current (IDM) 400 A —
RDS(on) max @ VGS=10V 4 mΩ —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] [DATA_NEEDED: VGS(th) value]
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] [DATA_NEEDED: Qg value]
Maximum Power Dissipation (PD) 167 W @ TC=25C —
Thermal Resistance, Junction-to-Case (RthJC) 0.9 K/W —
Rentang Suhu Kerja -55C to +175C (junction) -55 C to +150 C (typical MOSFET junction)
Paket PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount PG-TDSON-8-7 (SuperSO8 5x6)
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL1 (up to 260C peak reflow) 1
Automotive Qualification AEC-Q100 qualified —
Avalanche Rating 100% Avalanche tested —
AOI Compatibility Feasible for Automatic Optical Inspection —
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Part Number — BSC117N08NS5ATMA1
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) max — 80 V
Continuous Drain Current (ID) max — 49 A (Tc)
On-State Resistance (RDS(on)) max — 11.7 mOhm
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 50 W
Jumlah Pin — 8
Lead-Free — Yes

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IAUC100N10S5N040ATMA1

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