IAUC100N10S5N040ATMA1 vs BSC117N08NS5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC100N10S5N040ATMA1 disebabkan oleh Infineon dan BSC117N08NS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSC117N08NS5ATMA1 BSC117N08NS5ATMA1 - 80V 49A OptiMOS 5 N-FET | Infineon

BSC117N08NS5ATMA1 - 80V 49A OptiMOS 5 N-FET | Infineon

BSC117N08NS5ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUC100N10S5N040ATMA1 BSC117N08NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel, Enhancement Mode —
Technology OptiMOS-5 OptiMOS 5
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) @ TC=25C 100 A (package-limited) —
Pulsed Drain Current (IDM) 400 A —
RDS(on) max @ VGS=10V 4 mΩ —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] [DATA_NEEDED: VGS(th) value]
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] [DATA_NEEDED: Qg value]
Maximum Power Dissipation (PD) 167 W @ TC=25C —
Thermal Resistance, Junction-to-Case (RthJC) 0.9 K/W —
Gambaran Suhu Operasi -55C to +175C (junction) -55 C to +150 C (typical MOSFET junction)
Kemasan PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount PG-TDSON-8-7 (SuperSO8 5x6)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL MSL1 (up to 260C peak reflow) 1
Automotive Qualification AEC-Q100 qualified —
Avalanche Rating 100% Avalanche tested —
AOI Compatibility Feasible for Automatic Optical Inspection —
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Part Number — BSC117N08NS5ATMA1
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) max — 80 V
Continuous Drain Current (ID) max — 49 A (Tc)
On-State Resistance (RDS(on)) max — 11.7 mOhm
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 50 W
Kiraan Pin — 8
Lead-Free — Yes

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