IAUC120N06S5L032ATMA1 vs IAUC120N04S6L005ATMA1 Perbandingan
Perbandingan bersamaan detil IAUC120N06S5L032ATMA1 dari Infineon dan IAUC120N04S6L005ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUC120N06S5L032ATMA1 - 60V 120A OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L032ATMA1 ✓ AktifInfineon
IAUC120N04S6L005ATMA1 - 40V 120A 0.55mΩ N-Channel MOSFET | Infineon
IAUC120N04S6L005ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IAUC120N06S5L032ATMA1 | IAUC120N04S6L005ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 (60 V) | — |
| Tipe Transistor | N-Channel, Enhancement Mode | — |
| Drain-to-Source Voltage (V_DS) | 60 V | — |
| Continuous Drain Current (I_D, T_j) | 120 A | — |
| R_DS(on) Max (V_GS = 10 V) | 3.2 mOhm | — |
| Power Dissipation (P_D, T_C = 25 C) | 94 W | — |
| Paket | PG-TDSON-8-34 (5x6 mm) | PG-TDSON-8-53 (5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55 C to +175 C (T_j) | — |
| Technology | OptiMOS 5 Trench | OptiMOS 6, N-Channel Trench MOSFET |
| AEC-Q101 Qualified | Yes | — |
| Status RoHS | Compliant | Compliant |
| Level MSL | [DATA_NEEDED: MSL rating] | — |
| Gate Threshold Voltage V_GS(th) | [DATA_NEEDED: V_GS(th) typical and min/max] | — |
| Total Gate Charge Q_G | [DATA_NEEDED: Q_G total at V_GS=10V] | — |
| Part Number | — | IAUC120N04S6L005ATMA1 |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 120 A (Tj) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulse rating] |
| Power Dissipation (PD, Tc=25°C) | — | 187 W |
| RDS(on) max at VGS=10 V | — | 0.55 mΩ at 60 A |
| RDS(on) max at VGS=4.5 V | — | 0.85 mΩ |
| Gate-Source Voltage (VGS) | — | ±16 V |
| Gate Threshold Voltage (VGS(th)) | — | 2 V |
| Total Gate Charge (Qg) | — | 177 nC at VGS=10 V |
| Input Capacitance (Ciss) | — | 11.203 nF at 25 V |
| Output Capacitance (Coss) | — | 2.982 nF |
| Reverse Transfer Capacitance (Crss) | — | 175 pF |
| Suhu Hubung Kerja | — | -55 °C to +175 °C |
| Automotive Qualification | — | AEC-Q101 qualified |