IAUC120N06S5N022ATMA1 vs IAUC120N04S6N009ATMA1 Perbandingan

Perbandingan bersamaan detil IAUC120N06S5N022ATMA1 dari Infineon dan IAUC120N04S6N009ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUC120N06S5N022ATMA1 IAUC120N04S6N009ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Drain-Source Voltage (VDS) 60 V —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Continuous Drain Current (ID) 170 A (Tj) —
On-Resistance RDS(on) max 2.2 mΩ at VGS=10 V —
Power Dissipation (PD) 136 W (Tc) —
Rentang Suhu Kerja [DATA_NEEDED: TJ min/max] —
Paket PG-TDSON-8-34 (TDSON EP 5x6) PG-TDSON-8-33 (5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Technology OptiMOS-5 trench —
Channel Type N-Channel —
Jumlah Pin 8 (with exposed pad) —
Automotive Qualification AEC-Q101 AEC-Q101
Status RoHS Compliant —
Bebas Halogen Yes (per Infineon product family convention) —
Total Gate Charge (Qg) [DATA_NEEDED: typical Qg] —
RDS(on) at VGS=4.5V [DATA_NEEDED: RDS(on) @4.5V] —
Manufacturer — Infineon Technologies
Part Family — OptiMOS 6 40V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (V_DSS) — 40 V
Continuous Drain Current (I_D, Tc) — 120 A
Arus Kedip Pengecor — [DATA_NEEDED: pulsed I_D value]
R_DS(on) max @ V_GS=10V — 0.9 mΩ
Gate Threshold Voltage V_GS(th) typ — [DATA_NEEDED: V_GS(th) typical value]
Total Gate Charge Q_g typ — [DATA_NEEDED: Q_g typical]
Power Dissipation (Tc) — 150 W
Thermal Resistance R_thJC max — 1.0 K/W
Suhu Hubung Kerja — -55 °C to +175 °C
Level MSL — 1
RoHS — Compliant
Lead-Free / Halogen-Free — Yes (per Infineon product page)

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IAUC120N06S5N022ATMA1

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IAUC120N04S6N009ATMA1

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