IAUC28N08S5L230ATMA1 vs IAUC41N06S5L100ATMA1 Perbandingan
Perbandingan bersamaan detil IAUC28N08S5L230ATMA1 dari Infineon dan IAUC41N06S5L100ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUC28N08S5L230ATMA1 - 80V 28A 23mΩ OptiMOS-5 N-Channel MOSFET | Infineon
IAUC28N08S5L230ATMA1 ✓ AktifInfineon
IAUC41N06S5L100ATMA1 - 60V 41A N-Ch OptiMOS 5 MOSFET | Infineon
IAUC41N06S5L100ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IAUC28N08S5L230ATMA1 | IAUC41N06S5L100ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS-5 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 80 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>) | 28 A | — |
| Pulsed Drain Current (I<sub>DM</sub>) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) | 23 mΩ (typ) | — |
| Gate-Source Threshold (V<sub>GS(th)</sub>, typ) | 2.5 V | — |
| Gate Charge (Q<sub>g</sub>, typ) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) | 38 W | — |
| Suhu Hubung Kerja | -55 °C to +175 °C | — |
| Paket | PG-TDSON-8-33 (5x6 mm SSO8) | PG-TDSON-8-33 (TDSON-8, 5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | OptiMOS-5 Power MOSFET | OptiMOS 5 (Trench MOSFET) |
| Automotive Qualified | Yes (AEC-Q101) | Yes (AEC-Q101 automotive grade) |
| Status RoHS | Compliant | Compliant |
| Level MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, Tj) | — | 41 A |
| Power Dissipation (PD, TC) | — | 42 W |
| On-State Resistance (RDS(on)) max | — | 10 mOhm at VGS=10 V |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: max VGS rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Rentang Suhu Kerja | — | -55C to +175C |
| Channel Type | — | N-Channel |
| Interconnect | — | Copper clip (low-inductance) |