IAUC50N08S5L096ATMA1 vs ISC016N08NM8ATMA1 Perbandingan

Perbandingan bersamaan detil IAUC50N08S5L096ATMA1 dari Infineon dan ISC016N08NM8ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUC50N08S5L096ATMA1 IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΩ OptiMOS 5 | Infineon

IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΩ OptiMOS 5 | Infineon

IAUC50N08S5L096ATMA1 ✓ Aktif
Infineon
ISC016N08NM8ATMA1 ISC016N08NM8ATMA1 - 80V N-Ch OptiMOS 8 MOSFET | Infineon

ISC016N08NM8ATMA1 - 80V N-Ch OptiMOS 8 MOSFET | Infineon

ISC016N08NM8ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUC50N08S5L096ATMA1 ISC016N08NM8ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Series OptiMOS 5 OptiMOS 8
FET Type N-Channel —
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID) 50 A (Tc) —
Pulsed Drain Current (IDM) 200 A —
On-Resistance (RDS(on)) 9.6 mΩ max @ VGS=10V, ID=25A —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Power Dissipation (PD) 60 W (Tc) —
Rentang Suhu Kerja -55°C to +175°C -55 C to +150 C (junction)
Paket PG-TDSON-8-33 (5x6 mm) SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm)
Tipe Mounting Surface Mount Surface Mount
Automotive Qualification AEC-Q101 —
Status RoHS Compliant Compliant
Lead-Free Yes —
Level MSL [DATA_NEEDED: MSL level] 1 (per JEDEC J-STD-020E classification for SuperSO8)
Channel Type — N-Channel
Drain-Source Voltage (VDS max) — 80 V
Gate-Source Voltage (VGS max) — +/-20 V (typical rating)
Continuous Drain Current (ID) at Ta — 29 A
Continuous Drain Current (ID) at Tc — [DATA_NEEDED: pulsed/continuous current rating at Tc]
Pulsed Drain Current (IDM) at Tc — 268 A
Power Dissipation (PD) at Ta — 3 W
Power Dissipation (PD) at Tc — 263 W
On-State Resistance RDS(on) typ @ VGS=10V — 1.6 mOhm
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: gate threshold voltage]
Total Gate Charge Qg typ — [DATA_NEEDED: total gate charge]
Technology — Trench-gate OptiMOS 8 (silicon)
Lead-Free / Halogen-Free — Lead-free (per Infineon product page)

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