IAUC50N08S5L096ATMA1 vs ISC016N08NM8ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IAUC50N08S5L096ATMA1 sa pamamagitan ng Infineon at ISC016N08NM8ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IAUC50N08S5L096ATMA1 IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΩ OptiMOS 5 | Infineon

IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΩ OptiMOS 5 | Infineon

IAUC50N08S5L096ATMA1 ✓ Nakahanda
Infineon
ISC016N08NM8ATMA1 ISC016N08NM8ATMA1 - 80V N-Ch OptiMOS 8 MOSFET | Infineon

ISC016N08NM8ATMA1 - 80V N-Ch OptiMOS 8 MOSFET | Infineon

ISC016N08NM8ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IAUC50N08S5L096ATMA1 ISC016N08NM8ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Product Series OptiMOS 5 OptiMOS 8
FET Type N-Channel —
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID) 50 A (Tc) —
Pulsed Drain Current (IDM) 200 A —
On-Resistance (RDS(on)) 9.6 mΩ max @ VGS=10V, ID=25A —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Power Dissipation (PD) 60 W (Tc) —
Hanay ng Temperature na Operasyon -55°C to +175°C -55 C to +150 C (junction)
Packhaging PG-TDSON-8-33 (5x6 mm) SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
Automotive Qualification AEC-Q101 —
Tindminan RoHS Compliant Compliant
Lead-Free Yes —
Level ng MSL [DATA_NEEDED: MSL level] 1 (per JEDEC J-STD-020E classification for SuperSO8)
Channel Type — N-Channel
Drain-Source Voltage (VDS max) — 80 V
Gate-Source Voltage (VGS max) — +/-20 V (typical rating)
Continuous Drain Current (ID) at Ta — 29 A
Continuous Drain Current (ID) at Tc — [DATA_NEEDED: pulsed/continuous current rating at Tc]
Pulsed Drain Current (IDM) at Tc — 268 A
Power Dissipation (PD) at Ta — 3 W
Power Dissipation (PD) at Tc — 263 W
On-State Resistance RDS(on) typ @ VGS=10V — 1.6 mOhm
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: gate threshold voltage]
Total Gate Charge Qg typ — [DATA_NEEDED: total gate charge]
Technology — Trench-gate OptiMOS 8 (silicon)
Lead-Free / Halogen-Free — Lead-free (per Infineon product page)

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