IAUC60N06S5L073ATMA1 vs IAUC50N08S5L096ATMA1 Perbandingan
Perbandingan bersamaan detil IAUC60N06S5L073ATMA1 dari Infineon dan IAUC50N08S5L096ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IAUC60N06S5L073ATMA1 | IAUC50N08S5L096ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Tj | 60 A | — |
| On-Resistance RDS(on) max | 7.3 mΩ | — |
| Total Gate Charge (QG) | 17.4 nC | — |
| Power Dissipation (PD) at Tc | 52 W | — |
| Paket | PG-TDSON-8-33 (5x6 mm) | PG-TDSON-8-33 (5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55C to +175C | -55°C to +175°C |
| Technology | Trench (OptiMOS 5) | — |
| Jumlah Pin | 8 | — |
| Configuration | Single N-Channel | — |
| Qualification | AEC-Q101 automotive grade | — |
| Status RoHS | Compliant | Compliant |
| Level MSL | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL level] |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical] | — |
| Thermal Resistance RθJA | [DATA_NEEDED: thermal resistance junction-to-ambient] | — |
| Product Series | — | OptiMOS 5 |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) | — | 50 A (Tc) |
| Pulsed Drain Current (IDM) | — | 200 A |
| On-Resistance (RDS(on)) | — | 9.6 mΩ max @ VGS=10V, ID=25A |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Power Dissipation (PD) | — | 60 W (Tc) |
| Automotive Qualification | — | AEC-Q101 |
| Lead-Free | — | Yes |