IAUC60N06S5L073ATMA1 vs IAUC50N08S5L096ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC60N06S5L073ATMA1 disebabkan oleh Infineon dan IAUC50N08S5L096ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IAUC60N06S5L073ATMA1 | IAUC50N08S5L096ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Tj | 60 A | — |
| On-Resistance RDS(on) max | 7.3 mΩ | — |
| Total Gate Charge (QG) | 17.4 nC | — |
| Power Dissipation (PD) at Tc | 52 W | — |
| Kemasan | PG-TDSON-8-33 (5x6 mm) | PG-TDSON-8-33 (5x6 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55C to +175C | -55°C to +175°C |
| Technology | Trench (OptiMOS 5) | — |
| Bilangan Pin | 8 | — |
| Configuration | Single N-Channel | — |
| Qualification | AEC-Q101 automotive grade | — |
| Status RoHS | Compliant | Compliant |
| Aras MSL | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL level] |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical] | — |
| Thermal Resistance RθJA | [DATA_NEEDED: thermal resistance junction-to-ambient] | — |
| Product Series | — | OptiMOS 5 |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) | — | 50 A (Tc) |
| Pulsed Drain Current (IDM) | — | 200 A |
| On-Resistance (RDS(on)) | — | 9.6 mΩ max @ VGS=10V, ID=25A |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Power Dissipation (PD) | — | 60 W (Tc) |
| Automotive Qualification | — | AEC-Q101 |
| Lead-Free | — | Yes |