IAUC60N10S5L110ATMA1 vs IAUCN04S7N015GATMA1 Perbandingan

Perbandingan bersamaan detil IAUC60N10S5L110ATMA1 dari Infineon dan IAUCN04S7N015GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUC60N10S5L110ATMA1 IAUC60N10S5L110ATMA1 - 100V 11mΩ N-Ch OptiMOS 5 | Infineon

IAUC60N10S5L110ATMA1 - 100V 11mΩ N-Ch OptiMOS 5 | Infineon

IAUC60N10S5L110ATMA1 ✓ Aktif
Infineon
IAUCN04S7N015GATMA1 IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon

IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon

IAUCN04S7N015GATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUC60N10S5L110ATMA1 IAUCN04S7N015GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS™-5 —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (V<sub>DS</sub>) 100 V —
Continuous Drain Current (I<sub>D</sub>, Tc) 60 A —
Power Dissipation (P<sub>D</sub>, Tc) 88 W —
R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V 11 mΩ —
Gate Threshold Voltage (V<sub>GS(th)</sub>) 1.2 V —
Paket PG-TDSON-8-33 (TDSON-8 Single) PG-THSOG-4-1 (SSO4G 5x6) surface mount
Tipe Mounting Surface Mount Surface Mount (IMS-compatible source-down)
Rentang Suhu Kerja [DATA_NEEDED: min/max operating temperature] —
Gate-Source Voltage (V<sub>GS</sub>) Max [DATA_NEEDED: VGS max rating] —
Total Gate Charge (Q<sub>G</sub>) [DATA_NEEDED: Qg at specified Vgs] —
Avalanche Energy (E<sub>AS</sub>) [DATA_NEEDED: single-pulse avalanche energy] —
Lead-Free / RoHS Yes (RoHS compliant per LCSC listing) —
Packing Code ATMA1 (Tape & Reel) —
Level MSL 1 (per LCSC datasheet snippet) 1 (per JEDEC J-STD-020)
Bebas Halogen Yes (per Infineon product classification) —
Customer Info / FGR J52 (per Infineon product data) —
Product Family — OptiMOS 7
Channel Type — N-Channel
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D) — 165 A (Tc)
Power Dissipation (P_D) — 96 W (Tc)
R_DS(on) max — 1.53 mΩ at V_GS=10 V
Gate-Source Voltage (V_GS) max — [DATA_NEEDED: V_GS max]
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical]
Suhu Hubung Kerja — -55C to +175C
Automotive Qualification — AEC-Q101 qualified
Total Gate Charge (Q_G) — [DATA_NEEDED: total gate charge]
Status RoHS — Compliant

Spek dan Sumber

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