IAUC90N10S5N062ATMA1 vs BSC0902NSATMA1 Perbandingan

Perbandingan bersamaan detil IAUC90N10S5N062ATMA1 dari Infineon dan BSC0902NSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUC90N10S5N062ATMA1 BSC0902NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 5 —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 100 V 30 V
Continuous Drain Current (ID) at Tc=25C 90 A —
Maximum On-Resistance RDS(on) max at VGS=10V 6.2 mOhm —
Gate-Source Threshold Voltage VGS(th) typ 3.8 V —
Maximum Power Dissipation (Tc=25C) 115 W —
Suhu Hubung Kerja -55 C to +175 C —
Paket PG-TDSON-8-34 (TDSON-8) PG-TDSON-8-6 (SuperSO8)
Tipe Mounting Surface Mount Surface Mount
Technology Trench MOSFET (OptiMOS 5, Generation 5) —
Avalanche Rated Yes (100% avalanche tested) Yes (100% avalanche tested)
MSL (Moisture Sensitivity Level) MSL1 (260 C peak reflow) —
Automotive Qualification AEC-Q101 qualified —
RoHS / Green Product Yes (RoHS compliant, Green Product) —
Lead-Free Yes —
Tipe Transistor — N-Channel MOSFET
Continuous Drain Current (ID, Ta) — 24 A
Pulsed Drain Current (IDM, Tc) — 100 A
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 48 W
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical value]
RDS(on) @ VGS=10V max — [DATA_NEEDED: RDS(on) at VGS=10V]
RDS(on) @ VGS=4.5V max — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Total Gate Charge (Qg typ) — [DATA_NEEDED: Qg typical]
Rentang Suhu Kerja — -55C to +150C (Tj)
Qualification — JEDEC qualified for target applications
RoHS Compliance — Compliant (Pb-free lead plating)
Bebas Halogen — Yes, per IEC 61249-2-21

Spek dan Sumber

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